{"title":"Unveiling the role of superalkali dopants in augmented nonlinear optical response of C13H10F12 Janus molecule – A DFT study","authors":"Faiza Ahsan , Sehrish Sarfaraz , Khurshid Ayub","doi":"10.1016/j.mssp.2024.108995","DOIUrl":null,"url":null,"abstract":"<div><div>Design of new strategies to deliver materials with enhanced nonlinear optical (NLO) response is an active area of research. In this regard, we designed a comparatively less explored class of NLO materials which is superalkalide-based <em>Janus</em> molecules. We have designed (M<sub>3</sub>O-<strong>1</strong>-M′<sub>3</sub>O; M & M' = Li, Na, K) complexes involving superalkali as a source of excess electrons for superalkali through extended <em>Janus</em> molecule C<sub>13</sub>H<sub>10</sub>F<sub>12</sub>. The complexes show high NLO response with the hyperpolarizability values of up to 1.46 × 10<sup>5</sup> a. u. The designed complexes show electronic stability which is supported by global reactivity descriptors (GRD) and electronic properties like frontier molecular orbital (FMO) analyses. Moreover, the thermodynamic stability of the designed complexes upon doping of superalkali on C<sub>13</sub>H<sub>10</sub>F<sub>12</sub> is corroborated via interaction energy analysis (−3.01 to −6.31 eV). Similarly, UV–Vis analysis showed that studied complexes are transparent in deep UV regions. Frequency dependent hyperpolarizability results at high wavelength (<em>ω</em> = 1339 and 1906 nm) laser beams show remarkable enhancement in NLO response. Therefore, such materials can be customized and tunned for different applications in optical and electronic devices. Moreover, proposing such materials will open up further possibilities in crafting NLO complexes.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2000,"publicationDate":"2024-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124008916","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Design of new strategies to deliver materials with enhanced nonlinear optical (NLO) response is an active area of research. In this regard, we designed a comparatively less explored class of NLO materials which is superalkalide-based Janus molecules. We have designed (M3O-1-M′3O; M & M' = Li, Na, K) complexes involving superalkali as a source of excess electrons for superalkali through extended Janus molecule C13H10F12. The complexes show high NLO response with the hyperpolarizability values of up to 1.46 × 105 a. u. The designed complexes show electronic stability which is supported by global reactivity descriptors (GRD) and electronic properties like frontier molecular orbital (FMO) analyses. Moreover, the thermodynamic stability of the designed complexes upon doping of superalkali on C13H10F12 is corroborated via interaction energy analysis (−3.01 to −6.31 eV). Similarly, UV–Vis analysis showed that studied complexes are transparent in deep UV regions. Frequency dependent hyperpolarizability results at high wavelength (ω = 1339 and 1906 nm) laser beams show remarkable enhancement in NLO response. Therefore, such materials can be customized and tunned for different applications in optical and electronic devices. Moreover, proposing such materials will open up further possibilities in crafting NLO complexes.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.