{"title":"Enhanced photon emission from site- and energy-controlled InGaAs/GaAs quantum dots coupled to GaAs nanowires","authors":"Benjamin Dwir","doi":"10.1016/j.optlastec.2024.111934","DOIUrl":null,"url":null,"abstract":"<div><div>InGaAs/GaAs quantum dots (QDs) embedded in a GaAs substrate are very useful photon sources, including single and entangled photons, due to their unperturbed environment. Contrary to self-formed QDs, those grown in pyramidal pits can be well controlled in position and energy, important properties for scaling. However, photon extraction efficiency from these QDs is limited due to the GaAs/Air index mismatch and non-directionality of the emission. GaAs nanowires grown vertically on top of these QDs can serve as resonant antennas, thus enhancing their emission and increasing their usefulness as sources. Such structures were fabricated and their photon emission was studied by micro-photoluminescence as function of excitation power and temperature. The structures showed an intensity increase by up to x36 over quantum dots without nanowire antennas.</div></div>","PeriodicalId":19511,"journal":{"name":"Optics and Laser Technology","volume":"181 ","pages":"Article 111934"},"PeriodicalIF":4.6000,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics and Laser Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0030399224013926","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
InGaAs/GaAs quantum dots (QDs) embedded in a GaAs substrate are very useful photon sources, including single and entangled photons, due to their unperturbed environment. Contrary to self-formed QDs, those grown in pyramidal pits can be well controlled in position and energy, important properties for scaling. However, photon extraction efficiency from these QDs is limited due to the GaAs/Air index mismatch and non-directionality of the emission. GaAs nanowires grown vertically on top of these QDs can serve as resonant antennas, thus enhancing their emission and increasing their usefulness as sources. Such structures were fabricated and their photon emission was studied by micro-photoluminescence as function of excitation power and temperature. The structures showed an intensity increase by up to x36 over quantum dots without nanowire antennas.
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Optics & Laser Technology aims to provide a vehicle for the publication of a broad range of high quality research and review papers in those fields of scientific and engineering research appertaining to the development and application of the technology of optics and lasers. Papers describing original work in these areas are submitted to rigorous refereeing prior to acceptance for publication.
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•development in all types of lasers
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