Kimberly S. Pestovich , Luis Stand , Nicholas Anastasi , Megan A. Gillespie , Lakshmi S. Pandian , Charles L. Melcher , Edgar van Loef , Mariya Zhuravleva
{"title":"Intrinsic scintillation performance & europium concentration effects in RbSr2I5 and RbSr2Br5 scintillators","authors":"Kimberly S. Pestovich , Luis Stand , Nicholas Anastasi , Megan A. Gillespie , Lakshmi S. Pandian , Charles L. Melcher , Edgar van Loef , Mariya Zhuravleva","doi":"10.1016/j.jcrysgro.2024.127924","DOIUrl":null,"url":null,"abstract":"<div><div>Scintillators play crucial roles in homeland security applications like gamma ray spectroscopy and high energy X-ray radiography. For promising new scintillators, fine-tuning the luminescent dopant concentration is one avenue to further improve their performance and tailor their properties. In this work, the effects of europium dopant concentrations on the crystal growth, luminescence and scintillation properties of RbSr<sub>2</sub>Br<sub>5</sub> and RbSr<sub>2</sub>I<sub>5</sub> crystals was investigated. Nine transparent 7 mm diameter single crystals were grown via the Vertical Bridgman method. The optical band gap of RbSr<sub>2</sub>Br<sub>5</sub> was 5.9 eV and that of RbSr<sub>2</sub>I<sub>5</sub> was 4.7 eV. High scintillation performance was achieved with a relatively low europium concentration of 1 mol%. For both RbSr<sub>2</sub>Br<sub>5</sub>:Eu and RbSr<sub>2</sub>I<sub>5</sub>:Eu crystals, light yield of 60–90,000 ph/MeV, energy resolution 2.8–4.0 % at 662 keV, and X-ray afterglow 0.79–1.5 % at 2 ms were obtained.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127924"},"PeriodicalIF":1.7000,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824003622","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
Scintillators play crucial roles in homeland security applications like gamma ray spectroscopy and high energy X-ray radiography. For promising new scintillators, fine-tuning the luminescent dopant concentration is one avenue to further improve their performance and tailor their properties. In this work, the effects of europium dopant concentrations on the crystal growth, luminescence and scintillation properties of RbSr2Br5 and RbSr2I5 crystals was investigated. Nine transparent 7 mm diameter single crystals were grown via the Vertical Bridgman method. The optical band gap of RbSr2Br5 was 5.9 eV and that of RbSr2I5 was 4.7 eV. High scintillation performance was achieved with a relatively low europium concentration of 1 mol%. For both RbSr2Br5:Eu and RbSr2I5:Eu crystals, light yield of 60–90,000 ph/MeV, energy resolution 2.8–4.0 % at 662 keV, and X-ray afterglow 0.79–1.5 % at 2 ms were obtained.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.