Intrinsic scintillation performance & europium concentration effects in RbSr2I5 and RbSr2Br5 scintillators

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-10-09 DOI:10.1016/j.jcrysgro.2024.127924
Kimberly S. Pestovich , Luis Stand , Nicholas Anastasi , Megan A. Gillespie , Lakshmi S. Pandian , Charles L. Melcher , Edgar van Loef , Mariya Zhuravleva
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Abstract

Scintillators play crucial roles in homeland security applications like gamma ray spectroscopy and high energy X-ray radiography. For promising new scintillators, fine-tuning the luminescent dopant concentration is one avenue to further improve their performance and tailor their properties. In this work, the effects of europium dopant concentrations on the crystal growth, luminescence and scintillation properties of RbSr2Br5 and RbSr2I5 crystals was investigated. Nine transparent 7 mm diameter single crystals were grown via the Vertical Bridgman method. The optical band gap of RbSr2Br5 was 5.9 eV and that of RbSr2I5 was 4.7 eV. High scintillation performance was achieved with a relatively low europium concentration of 1 mol%. For both RbSr2Br5:Eu and RbSr2I5:Eu crystals, light yield of 60–90,000 ph/MeV, energy resolution 2.8–4.0 % at 662 keV, and X-ray afterglow 0.79–1.5 % at 2 ms were obtained.
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RbSr2I5 和 RbSr2Br5 闪烁器的内在闪烁性能和铕浓度效应
闪烁体在伽马射线光谱学和高能 X 射线射线照相术等国土安全应用中发挥着至关重要的作用。对于有前途的新型闪烁体来说,微调发光掺杂剂浓度是进一步提高其性能和定制其特性的途径之一。在这项工作中,研究了铕掺杂浓度对 RbSr2Br5 和 RbSr2I5 晶体生长、发光和闪烁特性的影响。通过垂直布里奇曼法生长出了 9 个直径为 7 毫米的透明单晶体。RbSr2Br5 的光带隙为 5.9 eV,RbSr2I5 的光带隙为 4.7 eV。在铕浓度相对较低的情况下(1 摩尔%)就能实现较高的闪烁性能。RbSr2Br5:Eu 和 RbSr2I5:Eu 晶体的光产率均为 60-90,000 ph/MeV,662 keV 时的能量分辨率为 2.8-4.0 %,2 ms 时的 X 射线余辉为 0.79-1.5 %。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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