Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Thin Solid Films Pub Date : 2024-10-09 DOI:10.1016/j.tsf.2024.140548

Yong-Lie Sun , Toshihide Nabatame , Jong Won Chung , Tomomi Sawada , Hiromi Miura , Manami Miyamoto , Kazuhito Tsukagoshi

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Abstract

p-Type tin(II) oxide (SnO (Sn²⁺)) formation using radiofrequency (RF) reactive magnetron sputtering and post-deposition annealing (PDA) processes was investigated. The as-grown SnO_x film deposited from an SnO_x (SnO:Sn = 60:40) target by RF sputtering at an oxygen partial pressure (P_O2) of 0 Pa consisted of 2 % Sn (Sn⁰), 42 % Sn²⁺, and 56 % SnO₂ (Sn⁴⁺). However, compared with the Sn²⁺ fraction observed after PDA under N₂ and low-vacuum (∼1 Pa) conditions, that after PDA at 300 °C under high vacuum (< 5 × 10⁻⁴ Pa) (HVPDA) increased substantially to greater than 62 %. This result was attributed to the transformation from SnO₂ to SnO during HVPDA. A staggered bottom-gate thin-film transistor with an SnO channel (10 nm), which was fabricated by HVPDA at 300 °C, exhibited p-type properties, including a relatively high on-current/off-current (I_on/I_off) ratio of 5.1 × 10⁴ and a hole field-effect mobility (µ_FE) of 1.8 cm²/(V·s).

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用于 p 型薄膜晶体管的溅射薄膜中蜕变的氧化锡和稳定的二氧化锡之间的成分变化

利用射频（RF）反应磁控溅射和沉积后退火（PDA）工艺研究了 p 型锡（II）氧化物（SnO (Sn2+)）的形成。在氧分压 (PO2) 为 0 Pa 的条件下，通过射频溅射从 SnOx（SnO:Sn = 60:40）靶材上沉积出的 SnOx 薄膜的原始生长状态包括 2 % 的 Sn (Sn0)、42 % 的 Sn2+ 和 56 % 的 SnO2 (Sn4+)。然而，与在 N2 和低真空（∼1 Pa）条件下进行 PDA 后观察到的 Sn2+ 部分相比，在 300 °C 高真空（< 5 × 10-4 Pa）条件下进行 PDA（HVPDA）后观察到的 Sn2+ 部分大幅增加，超过 62%。这一结果归因于在 HVPDA 期间从 SnO2 向 SnO 的转化。在 300 ℃ 下通过 HVPDA 制作的具有 SnO 沟道（10 nm）的交错底栅薄膜晶体管显示出 p 型特性，包括相对较高的导通/关断电流（Ion/Ioff）比（5.1 × 104）和 1.8 cm2/（V-s）的空穴场效应迁移率（µFE）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Thin Solid Films 工程技术-材料科学：膜

CiteScore

4.00

自引率

4.80%

发文量

381

审稿时长

7.5 months

期刊介绍： Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.