C.B. Nettar , R.N. Bhowmik , K. Devarani Devi , R.C. Meena , K. Asokan
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引用次数: 0
Abstract
We report the microstructure, optical and electrical properties of Al1.5Ga0.5O3 thin films implanted by 180 keV Fe and Co ions. The X-ray diffraction pattern confirmed rhombohedral structure with R c space group for pristine and Fe-implanted films. The Co-implanted films showed amorphous structure. SRIM simulations suggested oxygen vacancy in the films. The atomic force microscopy confirmed the formation of spherical-shaped particles (17–20 nm) in Co-implanted GaAlO_Si_550 films. The RMS roughness of the GaAlO_Si_550 films increased from 19 nm to 25 nm at higher Co-ion implantation fluences. X-ray photoelectron spectroscopy supported the formation of oxygen vacancy and non-stoichiometry at surface of the films. Electrical conductivity of the films enhanced up to 10−2- 10−3 S/m by metallic Fe- and Co ion implantation. Optical band gap was found at ∼3.85 eV for GaAlO_Al_550 and ∼4.04 eV for GaAlO_Si_550 pristine films. Optical band gap was stabilized in the range of 3.75–4.52 eV for Fe- and Co-implanted films, which can be useful for opto-electronic device applications in the UV and deep blue region.
期刊介绍:
Radiation Physics and Chemistry is a multidisciplinary journal that provides a medium for publication of substantial and original papers, reviews, and short communications which focus on research and developments involving ionizing radiation in radiation physics, radiation chemistry and radiation processing.
The journal aims to publish papers with significance to an international audience, containing substantial novelty and scientific impact. The Editors reserve the rights to reject, with or without external review, papers that do not meet these criteria. This could include papers that are very similar to previous publications, only with changed target substrates, employed materials, analyzed sites and experimental methods, report results without presenting new insights and/or hypothesis testing, or do not focus on the radiation effects.