Kim-Hoang Nguyen;Quyet Nguyen;Quynh-Trang Nguyen;Thanh-Tung Vu;Woojin Ahn;Loan Pham-Nguyen;Hanh-Phuc Le;Minkyu Je
{"title":"A Fully Integrated Dynamic-Voltage-Scaling Stimulator IC for Cochlear Implants","authors":"Kim-Hoang Nguyen;Quyet Nguyen;Quynh-Trang Nguyen;Thanh-Tung Vu;Woojin Ahn;Loan Pham-Nguyen;Hanh-Phuc Le;Minkyu Je","doi":"10.1109/LSSC.2024.3462559","DOIUrl":null,"url":null,"abstract":"A fully integrated dynamic-voltage-scaling stimulator IC, consisting of a novel reconfigurable supply modulator (RSM) and 12 high-voltage-tolerant channel drivers, for cochlear implants, is presented, utilizing a 180-nm standard CMOS process. The RSM is designed to adaptively generate one of four supply voltage levels ranging from 2.6 to 11.3 V, effectively stimulating the cochlea with varying electrode-tissue-interface impedance and stimulus currents while offering improved power efficiency. The channel driver design is miniaturized to support high-channel-count applications within a single IC. Additional excessive current protection is implemented to ensure charge balancing between biphasic stimulating pulses, complementing the electrode-shorting technique.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10681530/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
A fully integrated dynamic-voltage-scaling stimulator IC, consisting of a novel reconfigurable supply modulator (RSM) and 12 high-voltage-tolerant channel drivers, for cochlear implants, is presented, utilizing a 180-nm standard CMOS process. The RSM is designed to adaptively generate one of four supply voltage levels ranging from 2.6 to 11.3 V, effectively stimulating the cochlea with varying electrode-tissue-interface impedance and stimulus currents while offering improved power efficiency. The channel driver design is miniaturized to support high-channel-count applications within a single IC. Additional excessive current protection is implemented to ensure charge balancing between biphasic stimulating pulses, complementing the electrode-shorting technique.
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