A Fully Integrated 5510-μm² Process Monitor and Threshold Voltage Extractor Circuit in 28 nm

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-09-11 DOI:10.1109/LSSC.2024.3457768

Ido Shpernat;Asaf Feldman;Joseph Shor

引用次数: 0

Abstract

A new architecture of an on-die process monitor circuit is demonstrated in 28 nm. The proposed circuit can extract the threshold voltage,

$V_{\mathrm { TH,}}$

and random mismatch of a transistor using multiple extraction methods, including the second derivative method. A sigma-delta modulator analog-to-digital converter samples the output to enable on-die processing of the results. A

$V_{\mathrm { DS}}$

voltage control loop enables

$V_{\mathrm { TH}}$

extraction in both the linear and saturation regions of the device. The circuit has a compact area of

$5510~\mu $

m2.

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28 纳米全集成 5510-μm² 工艺监控器和阈值电压提取电路

演示了 28 纳米晶圆上工艺监控电路的新架构。所提出的电路可以使用多种提取方法（包括二次导数法）提取阈值电压、$V_{\mathrm { TH,}}$ 和晶体管的随机失配。Σ-Δ调制器模数转换器对输出进行采样，以便对结果进行片上处理。一个 $V_{\mathrm { DS}}$ 电压控制环路可在器件的线性和饱和区进行 $V_{\mathrm { TH}}$ 提取。电路面积仅为 5510~\mu $ m2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量