Analytical conditions for co-lasing in thulium ion-doped lasers at 2 μm and 2.3 μm

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2024-10-16 DOI:10.1007/s11082-024-07629-4
Alphan Sennaroglu, Mevlana Yunus Uludag, Mustafa Uzun
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Abstract

By assuming low doping concentration with negligible concentration-dependent energy transfer mechanisms, we employ rate-equation formalism to derive the coupled power-gain equations in steady state and investigate the requirements of co-lasing at 2 μm and 2.3 μm in continuous-wave thulium ion (Tm3+)-doped lasers. We obtain an analytical condition which provides a criterion about which optical transition lases first. Analytical expressions are further derived for single-lasing and co-lasing threshold powers. By using the spectroscopic parameters for Tm3+:YLiF4, our model predicts that 2.3 μm lasing can start first in gain media with low Tm3+ ion doping if the length of the gain medium is sufficiently long. We then discuss how the results of the low-concentration model developed in this study can be extended to the case of high doping concentration in an approximate way and obtain good agreement between model predictions and experimental co-lasing data previously obtained with Tm3+:YLiF4 lasers.

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2 μm 和 2.3 μm 掺铥离子激光器共激光的分析条件
通过假定低掺杂浓度和可忽略的浓度相关能量转移机制,我们采用速率方程形式主义推导出稳态耦合功率增益方程,并研究了连续波掺铥离子(Tm3+)激光器在 2 μm 和 2.3 μm 处共激光的要求。我们得到了一个分析条件,它提供了关于哪种光学转变先发生的标准。我们还进一步推导出了单激光和共激光阈值功率的分析表达式。通过使用 Tm3+:YLiF4 的光谱参数,我们的模型预测,如果增益介质的长度足够长,在低 Tm3+ 离子掺杂的增益介质中,2.3 μm 的激光会首先开始。然后,我们讨论了如何将本研究中建立的低浓度模型的结果近似地扩展到高掺杂浓度的情况,并得出了模型预测与之前用 Tm3+:YLiF4 激光器获得的实验共激光数据之间的良好一致性。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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