{"title":"Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films","authors":"Jinyeong Lee;Jaewook Jeong","doi":"10.1109/JEDS.2024.3468300","DOIUrl":null,"url":null,"abstract":"In this paper, the photoluminescence characteristics of solution-processed amorphous ZnO and related compounds of InZnO and GaZnO thin films were comparatively analyzed. Depending on the molarity of the precursor solution, PL emission peaks ranging from 382.4 nm to 384.8 nm were observed for the ZnO thin films. The PL emission peaks were closely related to the surface morphology of the thin films, which were clearly observed when isolated, nano-sized particles of quantum dot structure were present, leading to quantum confinement effect in the ZnO and GaZnO thin films. When uniform thin films formed, the PL emission peaks disappeared due to the increase of electrical and morphological connectivity, which reveals that the analysis of PL emission peak can be used to evaluate the film quality and the performance of thin-film transistors (TFTs) in solution-processed oxide-based materials.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"912-918"},"PeriodicalIF":2.0000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10695762","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10695762/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the photoluminescence characteristics of solution-processed amorphous ZnO and related compounds of InZnO and GaZnO thin films were comparatively analyzed. Depending on the molarity of the precursor solution, PL emission peaks ranging from 382.4 nm to 384.8 nm were observed for the ZnO thin films. The PL emission peaks were closely related to the surface morphology of the thin films, which were clearly observed when isolated, nano-sized particles of quantum dot structure were present, leading to quantum confinement effect in the ZnO and GaZnO thin films. When uniform thin films formed, the PL emission peaks disappeared due to the increase of electrical and morphological connectivity, which reveals that the analysis of PL emission peak can be used to evaluate the film quality and the performance of thin-film transistors (TFTs) in solution-processed oxide-based materials.
期刊介绍：
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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