Characterization of new silicon carbide neutron detectors with thermal and fast neutrons

Martín Pérez , Felipe Zamorano , Celeste Fleta , Begoña Fernández , Carlos Guerrero , Philippe Godignon , Giulio Pellegrini , Pablo Pérez-Maroto , Consuelo Guardiola
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Abstract

The aim of this work is to present a characterization of a new silicon carbide (SiC) neutron detector fabricated at the Institute of Microelectronics of Barcelona (IMB-CNM-CSIC). The device is based on a 50μm thick p-n diode built in a 4H-SiC wafer. Performance studies were carried out under different neutron energy spectra, including thermal and quasi-monoenergetic fast neutrons at the CNA HiSPANoS facility. We implemented a method for the fabrication of enriched LiF conversion layers to use for the detection of thermal neutrons. The detector was proven to be capable of being used for thermal neutron detection with conversion layers of 10B and LiF. A detection efficiency of 6 ± 1% was achieved with a 25μm thick LiF conversion layer. It was also confirmed that the device can be employed for the detection of recoil nuclei and protons produced by fast neutrons. The spectra obtained experimentally were compared with PHITS simulations. This work represents the first step towards the design and fabrication of new SiC neutron detectors in the IMB-CNM-CSIC clean room with potential applications in various scientific and technological fields.
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利用热中子和快中子确定新型碳化硅中子探测器的特性
这项工作旨在介绍巴塞罗那微电子研究所(IMB-CNM-CSIC)制造的新型碳化硅(SiC)中子探测器的特性。该装置基于 4H 碳化硅晶片中的一个 50 微米厚的 p-n 二极管。在不同的中子能谱(包括热中子和准单能快中子)条件下,我们在 CNA HiSPANoS 设备上进行了性能研究。我们采用了一种方法来制造富集 LiF 转换层,用于探测热中子。事实证明,该探测器能够利用 10B 和 LiF 转换层进行热中子探测。在使用 25 微米厚的 LiF 转换层时,探测效率达到了 6 ± 1%。实验还证实,该装置可用于探测快中子产生的反冲核和质子。实验获得的光谱与 PHITS 模拟进行了比较。这项工作标志着在 IMB-CNM-CSIC 无尘室设计和制造新型碳化硅中子探测器迈出了第一步,该探测器有可能应用于各种科学和技术领域。
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来源期刊
CiteScore
3.20
自引率
21.40%
发文量
787
审稿时长
1 months
期刊介绍: Section A of Nuclear Instruments and Methods in Physics Research publishes papers on design, manufacturing and performance of scientific instruments with an emphasis on large scale facilities. This includes the development of particle accelerators, ion sources, beam transport systems and target arrangements as well as the use of secondary phenomena such as synchrotron radiation and free electron lasers. It also includes all types of instrumentation for the detection and spectrometry of radiations from high energy processes and nuclear decays, as well as instrumentation for experiments at nuclear reactors. Specialized electronics for nuclear and other types of spectrometry as well as computerization of measurements and control systems in this area also find their place in the A section. Theoretical as well as experimental papers are accepted.
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