GaN-Based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser

IF 4.3 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-27 DOI:10.1109/JSTQE.2024.3469978

Chuanjie Li;Meixin Feng;Jiaqi Liu;Wei Liu;Xiujian Sun;Jianxun Liu;Zhiwei Sun;Gangyi Zhu;Shuming Zhang;Qian Sun;Hui Yang

引用次数: 0

Abstract

The article reports the successful fabrication of GaN-based resonant cavity light-emitting diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To realize the designed central wavelength and high reflectivity, the precise thickness control of NP GaN layer is extremely critical. By introducing the concept of space charge region in the thickness design of the n ⁺⁺ -GaN epitaxial growth for nanoporous GaN, accurate regulation of the centre wavelength of the NP GaN DBR reflection spectrum was achieved. Under light injection condition, longitudinal mode laser was observed at 438 nm, with a full width at half maximum (FWHM) of approximately 0.7 nm. Under electrical injection condition, the FWHM of the RCLED emission peak was about 3.4 nm.

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基于氮化镓的谐振腔发光二极管走向垂直腔表面发射激光器

文章报道了采用纳米多孔（NP）GaN/n-GaN分布式布拉格反射器（DBR）成功制造出基于氮化镓的谐振腔发光二极管（RCLED）。要实现设计的中心波长和高反射率，精确控制 NP GaN 层的厚度至关重要。通过在纳米多孔氮化镓（n++-GaN）外延生长的厚度设计中引入空间电荷区的概念，实现了对氮化镓/氮化镓分布式布拉格反射器（DBR）中心波长的精确调节。在光注入条件下，纵模激光波长为 438 nm，半最大全宽（FWHM）约为 0.7 nm。在电注入条件下，RCLED 发射峰的 FWHM 约为 3.4 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

10.60

自引率

2.00%

发文量

212

审稿时长

3 months

期刊介绍： Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.

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