{"title":"GaN-Based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser","authors":"Chuanjie Li;Meixin Feng;Jiaqi Liu;Wei Liu;Xiujian Sun;Jianxun Liu;Zhiwei Sun;Gangyi Zhu;Shuming Zhang;Qian Sun;Hui Yang","doi":"10.1109/JSTQE.2024.3469978","DOIUrl":null,"url":null,"abstract":"The article reports the successful fabrication of GaN-based resonant cavity light-emitting diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To realize the designed central wavelength and high reflectivity, the precise thickness control of NP GaN layer is extremely critical. By introducing the concept of space charge region in the thickness design of the n\n<sup>++</sup>\n-GaN epitaxial growth for nanoporous GaN, accurate regulation of the centre wavelength of the NP GaN DBR reflection spectrum was achieved. Under light injection condition, longitudinal mode laser was observed at 438 nm, with a full width at half maximum (FWHM) of approximately 0.7 nm. Under electrical injection condition, the FWHM of the RCLED emission peak was about 3.4 nm.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Selected Topics in Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10697339/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The article reports the successful fabrication of GaN-based resonant cavity light-emitting diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To realize the designed central wavelength and high reflectivity, the precise thickness control of NP GaN layer is extremely critical. By introducing the concept of space charge region in the thickness design of the n
++
-GaN epitaxial growth for nanoporous GaN, accurate regulation of the centre wavelength of the NP GaN DBR reflection spectrum was achieved. Under light injection condition, longitudinal mode laser was observed at 438 nm, with a full width at half maximum (FWHM) of approximately 0.7 nm. Under electrical injection condition, the FWHM of the RCLED emission peak was about 3.4 nm.
期刊介绍：
Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.
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