Correction to “Field-Free Spin-Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source”

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2024-10-22 DOI:10.1002/aelm.202400758

Dequan Meng, Shiwei Chen, Chuantong Ren, Jiaxu Li, Guibin Lan, Chaozhong Li, Yong Liu, Yurong Su, Guoqiang Yu, Guozhi Chai, Rui Xiong, Weisheng Zhao, Guang Yang, Shiheng Liang

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引用次数: 0

Abstract

Adv. Electron. Mater. 2024, 10, 2300665

DOI: 10.1002/aelm.202300665

The original expression for Equation (6):

$ξ_{z} = \frac{A_{DL}^{z}}{A_{FL}^{y}} \frac{e μ_{0} M_{s} t_{source} t_{FM}}{ℏ} {[1 + (M_{eff} / H_{r e s})]}^{\frac{1}{2}}$

should be corrected to:

$ξ_{z} = \frac{A_{DL}^{z}}{A_{FL}^{y}} \frac{e μ_{0} M_{s} t_{source} t_{FM}}{ℏ}$

We would like to clarify that the previous calculations were performed using the correct equation.

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对 "基于非共线反铁磁性自旋源的铁磁层无磁场自旋轨道转矩驱动垂直磁化切换 "的更正

D.Meng, S. Chen, C. Ren, J. Li, G. Lan, C. Li, Y. Liu, Y. Su, G. Yu, G. Chai, R. Xiong, W. Zhao, G. Yang, S. Liang, Adv. Electron.Mater.2024, 10, 2300665.https://doi.org/10.1002/aelm.202300665方程 (6) 的原始表达式为ξz=ADLzAFLye⁢μ0⁢Ms⁢tsource⁢tFMℏ⁢[1+(Meff/Hr⁢e⁢s)]12${{\xi }_z} = \frac{{A_{{\mathrm{DL}}}^z}}{{A_{{\mathrm{FL}}}^y}}\ \frac{{e{{\mu}_0}{{M}_{{m\mathrm{s}}}{{t}_{{{m\mathrm{source}}}}{{t}_{{{m\mathrm{FM}}}}}}{hbar }{{[ {1 + ( {{{M}_{{{m\mathrm{eff}}}}/{{H}_{res}}} )}}}}^{{frac{1}{2}}}$ 应该修正为：ξz=ADLzAFLyeμ0MstsourcetFMℏ${{xi }_z} = \frac{{A_{{Mathrm{DL}}}^z}}{{A_{{Mathrm{FL}}}^y}}\ \frac{{e{{\mu}_0}{{M}_{m\mathrm{s}}}{{t}_{{m\mathrm{source}}}}{{t}_{{m\mathrm{FM}}}}}}{hbar }$我们想澄清的是，之前的计算使用的是正确的方程。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.