Linear Weight Update Synaptic Responses in Ferrimagnetic Neuromorphic Devices

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2024-10-24 DOI:10.1002/aelm.202400591
Junwei Zeng, Binxuan Zhao, Yakun Liu, Teng Xu, Wanjun Jiang, Liang Fang, Jiahao Liu
{"title":"Linear Weight Update Synaptic Responses in Ferrimagnetic Neuromorphic Devices","authors":"Junwei Zeng, Binxuan Zhao, Yakun Liu, Teng Xu, Wanjun Jiang, Liang Fang, Jiahao Liu","doi":"10.1002/aelm.202400591","DOIUrl":null,"url":null,"abstract":"Ferrimagnetic materials with antiparallel exchange coupling, exhibit spin-orbit-torque-induced dynamics, offering an emerging platform for realizing neuromorphic devices, such as artificial synapses. However, the state-of-the-art artificial synapses based on ferrimagnet suffer from poor analog switching linearity, which serves as a bottleneck for achieving complex tasks with high accuracy in neuromorphic computing. Here, an artificial synapse is reported with high-weight update linearity in a compensated ferrimagnetic crossbar device. In particular, the linear weight update of the synapses is enhanced by engineering the current density distribution. Using experimentally derived device parameters, handwritten digit recognition can be achieved with an accuracy of over 95% in a three-layer fully connected artificial neural network. The work provides a universal method to improve the synaptic linearity, which also paves the way for applying the spin-orbit device in neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"9 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400591","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Ferrimagnetic materials with antiparallel exchange coupling, exhibit spin-orbit-torque-induced dynamics, offering an emerging platform for realizing neuromorphic devices, such as artificial synapses. However, the state-of-the-art artificial synapses based on ferrimagnet suffer from poor analog switching linearity, which serves as a bottleneck for achieving complex tasks with high accuracy in neuromorphic computing. Here, an artificial synapse is reported with high-weight update linearity in a compensated ferrimagnetic crossbar device. In particular, the linear weight update of the synapses is enhanced by engineering the current density distribution. Using experimentally derived device parameters, handwritten digit recognition can be achieved with an accuracy of over 95% in a three-layer fully connected artificial neural network. The work provides a universal method to improve the synaptic linearity, which also paves the way for applying the spin-orbit device in neuromorphic computing.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
铁磁神经形态设备中的线性权重更新突触响应
具有反平行交换耦合的铁磁材料表现出自旋轨道转矩诱导的动力学,为实现人工突触等神经形态器件提供了一个新兴平台。然而,最先进的基于铁磁体的人工突触存在模拟开关线性差的问题,这成为在神经形态计算中实现高精度复杂任务的瓶颈。本文报告了一种在补偿铁磁横杆器件中具有高权重更新线性度的人工突触。特别是,通过对电流密度分布进行工程设计,增强了突触的线性权重更新。利用实验得出的器件参数,在三层全连接人工神经网络中实现了超过 95% 的手写数字识别准确率。这项研究提供了一种提高突触线性度的通用方法,也为自旋轨道器件在神经形态计算中的应用铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
期刊最新文献
Extreme Enhancement‐Mode Operation Accumulation Channel Hydrogen‐Terminated Diamond FETs with Vth < −6 V and High on‐Current Highly Robust Double Memristive Device Based on Perovskite/Molybdenum Oxide‐Sulfide Compound Heterojunction System Rhodium-Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra-Wide Bandgap Semiconductors (Adv. Electron. Mater. 1/2025) Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025) Celebrating a Decade of Excellence and Innovation at Advanced Electronic Materials
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1