Demonstration of a novel majority logic in a memristive crossbar array for in-memory parallel computing.

IF 12.2 2区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Materials Horizons Pub Date : 2024-10-22 DOI:10.1039/d4mh01196a
Moon Gu Choi, Jae Hyun In, Hanchan Song, Gwangmin Kim, Hakseung Rhee, Woojoon Park, Kyung Min Kim
{"title":"Demonstration of a novel majority logic in a memristive crossbar array for in-memory parallel computing.","authors":"Moon Gu Choi, Jae Hyun In, Hanchan Song, Gwangmin Kim, Hakseung Rhee, Woojoon Park, Kyung Min Kim","doi":"10.1039/d4mh01196a","DOIUrl":null,"url":null,"abstract":"<p><p>A memristive crossbar array can execute Boolean logic operations directly within the memory, which is highly noteworthy as it addresses the data bottleneck issue in traditional von Neumann computing. Although its potential has been widely demonstrated, achieving practical levels of operational reliability and computational efficiency remains a challenge. Here, we introduce a three-input majority logic gate supported by near-memory operations, serving as a universal gate and achieving both robust reliability and high efficiency in versatile logic operations. We fabricated a highly reliable HfO<sub><i>x</i></sub>-based memristive array, incorporating a series resistor to increase the reset voltage of the memristor, thereby increasing the operational voltage margin of the gate operation. This ensured reliable operation of the majority gate, resulting in successful experimental proof of combined 1-bit full adder and subtractor operations performed in 5 steps using 7 cells. Additionally, we propose that an <i>N</i>-bit parallel prefix adder (PPA) operation is possible in <i>O</i>(log<sub>2</sub> <i>N</i>) steps, by taking advantage of the parallel operation capability of the majority gate. This achieves 8.5× higher spatiotemporal efficiency than the previously reported NOR-based logic system in 64-bit adder operation. Moreover, as <i>N</i> increases, the spatiotemporal efficiency further improves, which significantly enhances the applicability of memristive logic-in-memory.</p>","PeriodicalId":87,"journal":{"name":"Materials Horizons","volume":" ","pages":""},"PeriodicalIF":12.2000,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Horizons","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1039/d4mh01196a","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

A memristive crossbar array can execute Boolean logic operations directly within the memory, which is highly noteworthy as it addresses the data bottleneck issue in traditional von Neumann computing. Although its potential has been widely demonstrated, achieving practical levels of operational reliability and computational efficiency remains a challenge. Here, we introduce a three-input majority logic gate supported by near-memory operations, serving as a universal gate and achieving both robust reliability and high efficiency in versatile logic operations. We fabricated a highly reliable HfOx-based memristive array, incorporating a series resistor to increase the reset voltage of the memristor, thereby increasing the operational voltage margin of the gate operation. This ensured reliable operation of the majority gate, resulting in successful experimental proof of combined 1-bit full adder and subtractor operations performed in 5 steps using 7 cells. Additionally, we propose that an N-bit parallel prefix adder (PPA) operation is possible in O(log2N) steps, by taking advantage of the parallel operation capability of the majority gate. This achieves 8.5× higher spatiotemporal efficiency than the previously reported NOR-based logic system in 64-bit adder operation. Moreover, as N increases, the spatiotemporal efficiency further improves, which significantly enhances the applicability of memristive logic-in-memory.

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演示用于内存并行计算的忆阻交叉棒阵列中的新型多数逻辑。
忆阻式横条阵列可以直接在内存中执行布尔逻辑运算,解决了传统冯-诺依曼计算中的数据瓶颈问题,因此非常值得关注。尽管其潜力已得到广泛证明,但要达到实际操作可靠性和计算效率水平仍是一项挑战。在此,我们介绍了一种由近乎内存操作支持的三输入多数逻辑门,作为一种通用门,在多功能逻辑运算中实现了稳健的可靠性和高效率。我们制造了一种基于氧化铪的高可靠性忆阻器阵列,其中包含一个串联电阻器,用于提高忆阻器的复位电压,从而增加栅极操作的工作电压裕量。这确保了多数门的可靠运行,从而成功地利用 7 个单元在 5 个步骤中完成了 1 位全加法器和减法器的组合运算。此外,我们还提出,利用多数门的并行操作能力,可以在 O(log2 N) 步内实现 N 位并行前缀加法器 (PPA) 操作。与之前报道的基于 NOR 逻辑系统的 64 位加法器操作相比,时空效率提高了 8.5 倍。此外,随着 N 的增加,时空效率也会进一步提高,这大大增强了内存逻辑的适用性。
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来源期刊
Materials Horizons
Materials Horizons CHEMISTRY, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
18.90
自引率
2.30%
发文量
306
审稿时长
1.3 months
期刊介绍: Materials Horizons is a leading journal in materials science that focuses on publishing exceptionally high-quality and innovative research. The journal prioritizes original research that introduces new concepts or ways of thinking, rather than solely reporting technological advancements. However, groundbreaking articles featuring record-breaking material performance may also be published. To be considered for publication, the work must be of significant interest to our community-spanning readership. Starting from 2021, all articles published in Materials Horizons will be indexed in MEDLINE©. The journal publishes various types of articles, including Communications, Reviews, Opinion pieces, Focus articles, and Comments. It serves as a core journal for researchers from academia, government, and industry across all areas of materials research. Materials Horizons is a Transformative Journal and compliant with Plan S. It has an impact factor of 13.3 and is indexed in MEDLINE.
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