An Approach to Extract the Trap States via the Dynamic Ron Method With Substrate Voltage Applied During the Recovery Time

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-10-04 DOI:10.1109/TED.2024.3467038
Ya-Huan Lee;Po-Hsun Chen;Yong-Ci Zhang;Chung-Wei Wu;Sheng-Yao Chou;Yu-Bo Wang;Hung-Ming Kuo;Yu-Shan Lin;Yan-Ta Chen;Yu-Jie Tsai;Ting-Chang Chang
{"title":"An Approach to Extract the Trap States via the Dynamic Ron Method With Substrate Voltage Applied During the Recovery Time","authors":"Ya-Huan Lee;Po-Hsun Chen;Yong-Ci Zhang;Chung-Wei Wu;Sheng-Yao Chou;Yu-Bo Wang;Hung-Ming Kuo;Yu-Shan Lin;Yan-Ta Chen;Yu-Jie Tsai;Ting-Chang Chang","doi":"10.1109/TED.2024.3467038","DOIUrl":null,"url":null,"abstract":"This study discusses the application of the substrate voltage during the recovery time with the dynamic on-resistance (dynamic \n<inline-formula> <tex-math>${R}_{\\text {on}}$ </tex-math></inline-formula>\n) method to extract the deep trap states in the buffer layer after the hard-switching stress in p-GaN high electron mobility transistors (p-GaN HEMTs). This method will be more suitable for the detection of the deep trap states where the carriers are difficult to de-trap in the buffer layer. Then, a hard switching stress condition is applied to the device and the degradation is caused by the mechanism of the hot electron effect and the impact ionization. The generated electrons and holes will trap into the buffer layer in the drift region at the gate edge near the drain side and the AlGaN layer under the gate, respectively. Moreover, through the novel of the dynamic \n<inline-formula> <tex-math>${R}_{\\text {on}}$ </tex-math></inline-formula>\n method with the substrate voltage applied, the deep trap states in the buffer can be extracted.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10705100/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

This study discusses the application of the substrate voltage during the recovery time with the dynamic on-resistance (dynamic ${R}_{\text {on}}$ ) method to extract the deep trap states in the buffer layer after the hard-switching stress in p-GaN high electron mobility transistors (p-GaN HEMTs). This method will be more suitable for the detection of the deep trap states where the carriers are difficult to de-trap in the buffer layer. Then, a hard switching stress condition is applied to the device and the degradation is caused by the mechanism of the hot electron effect and the impact ionization. The generated electrons and holes will trap into the buffer layer in the drift region at the gate edge near the drain side and the AlGaN layer under the gate, respectively. Moreover, through the novel of the dynamic ${R}_{\text {on}}$ method with the substrate voltage applied, the deep trap states in the buffer can be extracted.
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在恢复时间内施加基底电压,通过动态罗恩法提取陷阱状态的方法
本研究讨论了在 p-GaN 高电子迁移率晶体管(p-GaN HEMT)中采用动态导通电阻(dynamic ${R}_{text {on}}$)方法提取硬开关应力后缓冲层中的深陷阱态时,恢复时间内的衬底电压。这种方法更适合检测缓冲层中载流子难以去除的深陷阱态。然后,对器件施加硬开关应力条件,在热电子效应和撞击电离机制的作用下导致器件降解。产生的电子和空穴将分别俘获到栅极边缘靠近漏极侧漂移区的缓冲层和栅极下的氮化铝层。此外,通过施加衬底电压的新型动态 ${R}_{text {on}$ 方法,可以提取缓冲层中的深阱态。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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