{"title":"An Approach to Extract the Trap States via the Dynamic Ron Method With Substrate Voltage Applied During the Recovery Time","authors":"Ya-Huan Lee;Po-Hsun Chen;Yong-Ci Zhang;Chung-Wei Wu;Sheng-Yao Chou;Yu-Bo Wang;Hung-Ming Kuo;Yu-Shan Lin;Yan-Ta Chen;Yu-Jie Tsai;Ting-Chang Chang","doi":"10.1109/TED.2024.3467038","DOIUrl":null,"url":null,"abstract":"This study discusses the application of the substrate voltage during the recovery time with the dynamic on-resistance (dynamic \n<inline-formula> <tex-math>${R}_{\\text {on}}$ </tex-math></inline-formula>\n) method to extract the deep trap states in the buffer layer after the hard-switching stress in p-GaN high electron mobility transistors (p-GaN HEMTs). This method will be more suitable for the detection of the deep trap states where the carriers are difficult to de-trap in the buffer layer. Then, a hard switching stress condition is applied to the device and the degradation is caused by the mechanism of the hot electron effect and the impact ionization. The generated electrons and holes will trap into the buffer layer in the drift region at the gate edge near the drain side and the AlGaN layer under the gate, respectively. Moreover, through the novel of the dynamic \n<inline-formula> <tex-math>${R}_{\\text {on}}$ </tex-math></inline-formula>\n method with the substrate voltage applied, the deep trap states in the buffer can be extracted.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10705100/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study discusses the application of the substrate voltage during the recovery time with the dynamic on-resistance (dynamic
${R}_{\text {on}}$
) method to extract the deep trap states in the buffer layer after the hard-switching stress in p-GaN high electron mobility transistors (p-GaN HEMTs). This method will be more suitable for the detection of the deep trap states where the carriers are difficult to de-trap in the buffer layer. Then, a hard switching stress condition is applied to the device and the degradation is caused by the mechanism of the hot electron effect and the impact ionization. The generated electrons and holes will trap into the buffer layer in the drift region at the gate edge near the drain side and the AlGaN layer under the gate, respectively. Moreover, through the novel of the dynamic
${R}_{\text {on}}$
method with the substrate voltage applied, the deep trap states in the buffer can be extracted.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.