Skipper-in-CMOS: Nondestructive Readout With Subelectron Noise Performance for Pixel Detectors

Abstract

The Skipper-in-CMOS image sensor integrates the nondestructive readout capability of skipper charge coupled devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode (PPD) in a CMOS imaging process while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtained from a ${15} \times {15}~\mu $ m2 pixel cell of a Skipper-in-CMOS sensor fabricated in Tower Semiconductor’s commercial 180-nm CMOS image sensor process are presented. Measurements confirm the expected reduction of the readout noise with the number of samples down to deep subelectron noise of $0.15\text {e}^ - $ , demonstrating the charge transfer operation from the PPD and the single photon counting operation when the sensor is exposed to light. This article also discusses new testing strategies employed for its operation and characterization.