{"title":"Enhancing optical properties in sulphamic acid single crystals through caesium doping for advanced NLO applications","authors":"G. Sudhakar, D. Rajan Babu","doi":"10.1007/s11082-024-07748-y","DOIUrl":null,"url":null,"abstract":"<div><p>Sulphamic acid yielded bulk single crystals (pure and Cs doped SA) through a conventional growth process at 30°C. Doping with Cs: SA significantly impacted the material’s structure, as evidenced by stronger XRD peaks indicating enhanced crystallinity and FT-IR spectra showing characteristic peak broadening and intensity variations that confirm dopant incorporation into the SA lattice. From the EDAX analysis the presence of Cs ions in the SA lattice. The effect of Cs: SA doping on the optical properties of the crystals was investigated by calculating their absorbance and band gap. The grown crystal’s Meyer’s index value indicates that it belongs to the soft material group. Dielectric investigations were carried out to comprehend the diverse polarisation mechanisms at various temperatures. It is clear from the thermal investigation that the crystal dissociates. Doping Cs: SA crystals significantly increased their third-order susceptibility, indicating enhanced nonlinear optical (NLO) properties.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-07748-y","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Sulphamic acid yielded bulk single crystals (pure and Cs doped SA) through a conventional growth process at 30°C. Doping with Cs: SA significantly impacted the material’s structure, as evidenced by stronger XRD peaks indicating enhanced crystallinity and FT-IR spectra showing characteristic peak broadening and intensity variations that confirm dopant incorporation into the SA lattice. From the EDAX analysis the presence of Cs ions in the SA lattice. The effect of Cs: SA doping on the optical properties of the crystals was investigated by calculating their absorbance and band gap. The grown crystal’s Meyer’s index value indicates that it belongs to the soft material group. Dielectric investigations were carried out to comprehend the diverse polarisation mechanisms at various temperatures. It is clear from the thermal investigation that the crystal dissociates. Doping Cs: SA crystals significantly increased their third-order susceptibility, indicating enhanced nonlinear optical (NLO) properties.
期刊介绍：
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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