Uniform Diffusion of Cooper Pairing Mediated by Hole Carriers in Topological Sb2Te3/Nb.

IF 15.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY ACS Nano Pub Date : 2024-11-12 Epub Date: 2024-10-29 DOI:10.1021/acsnano.4c10533
Joseph A Hlevyack, Sahand Najafzadeh, Yao Li, Tsubaki Nagashima, Akifumi Mine, Yigui Zhong, Takeshi Suzuki, Akiko Fukushima, Meng-Kai Lin, Soorya Suresh Babu, Jinwoong Hwang, Ji-Eun Lee, Sung-Kwan Mo, James N Eckstein, Shik Shin, Kozo Okazaki, Tai-Chang Chiang
{"title":"Uniform Diffusion of Cooper Pairing Mediated by Hole Carriers in Topological Sb<sub>2</sub>Te<sub>3</sub>/Nb.","authors":"Joseph A Hlevyack, Sahand Najafzadeh, Yao Li, Tsubaki Nagashima, Akifumi Mine, Yigui Zhong, Takeshi Suzuki, Akiko Fukushima, Meng-Kai Lin, Soorya Suresh Babu, Jinwoong Hwang, Ji-Eun Lee, Sung-Kwan Mo, James N Eckstein, Shik Shin, Kozo Okazaki, Tai-Chang Chiang","doi":"10.1021/acsnano.4c10533","DOIUrl":null,"url":null,"abstract":"<p><p>Spin-helical Dirac Fermions at a doped topological insulator's boundaries can support Majorana quasiparticles when coupled with <i>s</i>-wave superconductors, but in <i>n</i>-doped systems, the requisite induced Cooper pairing in topological states is often buried at heterointerfaces or complicated by degenerate coupling with bulk conduction carriers. Rarely probed are <i>p</i>-doped topological structures with nondegenerate Dirac and bulk valence bands at the Fermi level, which may foster long-range superconductivity without sacrificing Majorana physics. Using ultrahigh-resolution photoemission, we report proximity pairing with a large decay length in <i>p</i>-doped topological Sb<sub>2</sub>Te<sub>3</sub> on superconducting Nb. Despite no momentum-space degeneracy, the topological and bulk states of Sb<sub>2</sub>Te<sub>3</sub>/Nb exhibit the same isotropic superconducting gaps at low temperatures. Our results unify principles for realizing accessible pairing in Dirac Fermions relevant to topological superconductivity.</p>","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":" ","pages":"31323-31331"},"PeriodicalIF":15.8000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11562947/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Nano","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1021/acsnano.4c10533","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/10/29 0:00:00","PubModel":"Epub","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Spin-helical Dirac Fermions at a doped topological insulator's boundaries can support Majorana quasiparticles when coupled with s-wave superconductors, but in n-doped systems, the requisite induced Cooper pairing in topological states is often buried at heterointerfaces or complicated by degenerate coupling with bulk conduction carriers. Rarely probed are p-doped topological structures with nondegenerate Dirac and bulk valence bands at the Fermi level, which may foster long-range superconductivity without sacrificing Majorana physics. Using ultrahigh-resolution photoemission, we report proximity pairing with a large decay length in p-doped topological Sb2Te3 on superconducting Nb. Despite no momentum-space degeneracy, the topological and bulk states of Sb2Te3/Nb exhibit the same isotropic superconducting gaps at low temperatures. Our results unify principles for realizing accessible pairing in Dirac Fermions relevant to topological superconductivity.

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拓扑 Sb2Te3/Nb 中由空穴载流子介导的库珀配对的均匀扩散。
掺杂拓扑绝缘体边界上的自旋螺旋狄拉克费米子在与 s 波超导体耦合时可支持马约拉纳准粒子,但在 n 掺杂系统中,拓扑态中必要的诱导库珀配对往往被埋没在异质界面上,或因与体传导载流子的退化耦合而变得复杂。在费米级具有非失能狄拉克带和体价带的 p 掺杂拓扑结构很少被探测到,这种结构可以在不牺牲马约拉纳物理的情况下促进长程超导。我们利用超高分辨率光发射技术,报告了在超导铌上的 p 掺杂拓扑 Sb2Te3 中具有大衰变长度的近距离配对。尽管没有动量-空间退化,但 Sb2Te3/Nb 的拓扑态和体态在低温下表现出相同的各向同性超导间隙。我们的研究结果统一了在狄拉克费米子中实现与拓扑超导相关的无障碍配对的原理。
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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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