High Figure of Merit 4.5 GHz Solidly Mounted Resonator Fabricated Using High-Quality Al₀.₈Sc₀.₂N Films

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-09-23 DOI:10.1109/LED.2024.3465567

Zekai Wang;Yao Cai;Tingting Yang;Binghui Lin;Yaxin Wang;Yuqi Ren;Yupeng Zheng;Shizhao Wang;Yan Liu;Chengliang Sun

引用次数: 0

Abstract

How to simultaneously achieve a high effective electromechanical coupling coefficient and a high Q value for solidly mounted resonator (SMR) has become a key technical problem in filter applications. In this study, a new process flow for SMR devices using a wafer bonding technology is proposed. Based on this method, high-quality Al0.8 Sc0.2 N piezoelectric film grown on the metal-organic chemical vapor deposition (MOCVD) AlN buffer layer was successfully applied to fabricate SMR. A 4.5 GHz SMR resonator was demonstrated with an effective electromechanical coupling coefficient

$({k}_{\textit {eff}}^{{2}})$

of 12.27%, a Qp of 1009, and the figure of merit (FOM) up to 123. The better performance originated from the high-quality piezoelectric films enable SMR to be more widely used in various radio-frequency fields.

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使用高质量 Al₀.₈Sc₀.₂N 薄膜制作的高优越性 4.5 GHz 固体安装谐振器

如何同时实现固体安装谐振器（SMR）的高有效机电耦合系数和高 Q 值已成为滤波器应用中的一个关键技术问题。本研究提出了一种使用晶圆键合技术制造 SMR 器件的新工艺流程。基于这种方法，在金属有机化学气相沉积（MOCVD）AlN 缓冲层上生长的高质量 Al0.8 Sc0.2 N 压电薄膜被成功用于制造 SMR。实验证明，4.5 GHz SMR 谐振器的有效机电耦合系数 $({k}_{text\it {eff}}^{{2}})$ 为 12.27%，Qp 为 1009，优点系数 (FOM) 高达 123。高质量压电薄膜带来的更佳性能使 SMR 能够更广泛地应用于各种射频领域。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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