{"title":"Quantum electrodynamical formulation of photochemical acid generation and its implications on optical lithography","authors":"Seungjin Lee","doi":"10.4218/etrij.2024-0127","DOIUrl":null,"url":null,"abstract":"<p>The photochemical acid generation is refined from the first principles of quantum electrodynamics. First, we briefly review the formulation of the quantum theory of light based on the quantum electrodynamics framework to establish the probability of acid generation at a given spacetime point. The quantum mechanical acid generation is then combined with the deprotection mechanism to obtain a probabilistic description of the deprotection density directly related to feature formation in a photoresist. A statistical analysis of the random deprotection density is presented to reveal the leading characteristics of stochastic feature formation.</p>","PeriodicalId":11901,"journal":{"name":"ETRI Journal","volume":"46 5","pages":"774-782"},"PeriodicalIF":1.3000,"publicationDate":"2024-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.4218/etrij.2024-0127","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ETRI Journal","FirstCategoryId":"94","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.4218/etrij.2024-0127","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The photochemical acid generation is refined from the first principles of quantum electrodynamics. First, we briefly review the formulation of the quantum theory of light based on the quantum electrodynamics framework to establish the probability of acid generation at a given spacetime point. The quantum mechanical acid generation is then combined with the deprotection mechanism to obtain a probabilistic description of the deprotection density directly related to feature formation in a photoresist. A statistical analysis of the random deprotection density is presented to reveal the leading characteristics of stochastic feature formation.
期刊介绍:
ETRI Journal is an international, peer-reviewed multidisciplinary journal published bimonthly in English. The main focus of the journal is to provide an open forum to exchange innovative ideas and technology in the fields of information, telecommunications, and electronics.
Key topics of interest include high-performance computing, big data analytics, cloud computing, multimedia technology, communication networks and services, wireless communications and mobile computing, material and component technology, as well as security.
With an international editorial committee and experts from around the world as reviewers, ETRI Journal publishes high-quality research papers on the latest and best developments from the global community.