Computational Exploration of the Impact of Low-Spin and High-Spin Ground State on the Chelating Ability of Dimethylglyoxime Ligand on Dihalo Transition Metal: A QTAIM, EDA, and CDA Analysis

IF 2.3 3区 化学 Q3 CHEMISTRY, PHYSICAL International Journal of Quantum Chemistry Pub Date : 2024-10-25 DOI:10.1002/qua.27495
Suzane Leonie Djendo Mazia, Moto Ongagna Jean, Adjieufack Abel Idrice, Daniel Lissouck, Jean Claude Ndom, Désiré Bikele Mama
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Abstract

We have explored the chelation of dimethylglyoxime ligand to divalent (ndx: x = 6, 7, 8) transition metal (TM) cations in two media (gas phase and water) at the B3LYP//LANL2DZ/6–311+G (d,p) and B3LYP/def2-TZVP level at lower multiplicity and higher multiplicity states. Majority of the 18 optimized halide (chloride and bromide) complexes prefer square planar configuration. The correlations discerned between the experimental structural data and their estimated counterparts demonstrate a good credibility for complexes at lower multiplicity state. The basis set superposition errors (BSSEs) estimated is very small which reflects the fact that the choice of different basis sets (B3LYP//LANL2DZ/6–311+G (d,p)) introduces a slight bias in the calculation of energies. The ADMP (atom-centered density matrix propagation) simulations in water on chloride complexes indicate the irreversible nature of these M—N dissociation in trajectory simulation process. This fact explains our exclusive focus on the examination of the [glyoxime ligand]…[MX2] interactions. In addition, the solvation of (3d and 4d) transition metal chloride complexes causes a sensitive augmentation of the metal ion affinity (MIA) with an average of 0.29 and 0.24 kcal/mol. In both multiplicity states, the topological parameters have illustrated that the M—N and M—X bonds are typical metal–ligand in both media. The average ΔEorbEsteric ratio equal to 0.45 and 0.11 in gas phase and water, respectively, reveals the predominance of the contributions from non-covalent bonding interactions (NCI) compared to those of covalent bonding. But, the maximal value equal to 6.760 is obtained for bromide rhodium complex in water. NBO analysis in both media highlights the fact that a more pronounced ionic character is observed for the majority of the chloride complexes at both spin multiplicity states because of their higher retained charges on the metal atom. For [dimethylglyoxime]…[MX2] interaction (X = Cl and Br), the charge decomposition analysis demonstrates that the lowest value of the d/b ratio is found for the chloride platinum complex at lower multiplicity state in water. This is a proof of its strong relativistic effects.

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低旋和高旋基态对二甲基乙二醛肟配体与二卤过渡金属螯合能力影响的计算探索:QTAIM、EDA 和 CDA 分析
我们在 B3LYP//LANL2DZ/6-311+G (d,p) 和 B3LYP/def2-TZVP 水平的低倍率和高倍率状态下,探讨了二甲基乙二醛配体与二价(ndx:x = 6、7、8)过渡金属(TM)阳离子在两种介质(气相和水)中的螯合作用。在 18 个优化的卤化物(氯化物和溴化物)配合物中,大多数都倾向于方形平面构型。实验结构数据与估计结构数据之间的相关性表明,低倍率状态下的复合物具有良好的可信度。估计的基集叠加误差(BSSEs)非常小,这反映出选择不同的基集(B3LYP//LANL2DZ/6-311+G (d,p))在计算能量时会产生轻微的偏差。在水中对氯化物络合物进行的 ADMP(原子中心密度矩阵传播)模拟表明,在轨迹模拟过程中,这些 M-N 解离具有不可逆的性质。这也是我们专注于研究[乙二醛肟配体]...[MX2]相互作用的原因。此外,(3d 和 4d)过渡金属氯化物络合物的溶解会导致金属离子亲和力(MIA)的敏感增强,平均值分别为 0.29 和 0.24 kcal/mol。在这两种多重态中,拓扑参数都表明 M-N 和 M-X 键是两种介质中典型的金属配体。气相和水中的平均ΔEorb/ΔEsteric 比率分别为 0.45 和 0.11,这表明与共价键相比,非共价键相互作用(NCI)的贡献占主导地位。但溴化铑络合物在水中的最大值为 6.760。在这两种介质中进行的 NBO 分析突出表明,在两种自旋倍率状态下,大多数氯化物络合物都具有更明显的离子特性,因为它们在金属原子上保留了更高的电荷。对于[二甲基乙二酸肟]...[MX2]相互作用(X = Cl 和 Br),电荷分解分析表明,在水中,氯化物铂络合物在较低倍率状态下的 d/b 比值最低。这证明了其强大的相对论效应。
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来源期刊
International Journal of Quantum Chemistry
International Journal of Quantum Chemistry 化学-数学跨学科应用
CiteScore
4.70
自引率
4.50%
发文量
185
审稿时长
2 months
期刊介绍: Since its first formulation quantum chemistry has provided the conceptual and terminological framework necessary to understand atoms, molecules and the condensed matter. Over the past decades synergistic advances in the methodological developments, software and hardware have transformed quantum chemistry in a truly interdisciplinary science that has expanded beyond its traditional core of molecular sciences to fields as diverse as chemistry and catalysis, biophysics, nanotechnology and material science.
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