Tip-induced local Fermi level alignment: A Stark shift in vacuum level in scanning tunneling microscope configurations

IF 4.6 2区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY Chinese Journal of Physics Pub Date : 2024-10-16 DOI:10.1016/j.cjph.2024.10.020
Wei-Bin Su , Wen-Yuan Chan , Shin-Ming Lu , Ho-Hsiang Chang , Chia-Seng Chang
{"title":"Tip-induced local Fermi level alignment: A Stark shift in vacuum level in scanning tunneling microscope configurations","authors":"Wei-Bin Su ,&nbsp;Wen-Yuan Chan ,&nbsp;Shin-Ming Lu ,&nbsp;Ho-Hsiang Chang ,&nbsp;Chia-Seng Chang","doi":"10.1016/j.cjph.2024.10.020","DOIUrl":null,"url":null,"abstract":"<div><div>Electric fields in the junction of a scanning tunneling microscope (STM) are generally considered to have a negligible impact on the vacuum level (VL) of materials. We employed field emission resonance (FER) in the STM, combined with the triangular potential model, to measure the VL of the Ag(100) surface under varying electric currents. Unexpectedly, our results reveal that the VL exhibits a linear positive energy shift with increasing electric field strength. We suggest that this Stark shift in the VL arises from local Fermi level alignment induced by the STM tip. Additionally, we examined the VL of Ag islands grown on Cu(111) and Au(111) surfaces under different currents. Despite the Ag island having a lower work function than the Cu(111) and Au(111) surfaces, the energy shift in the VL with respect to the electric field on the Ag island is almost identical to that on the substrate under the same tip structure. This suggests that the Stark shift of the VL is insensitive to the work function. These findings are crucial for utilizing FER to measure local work function variations on surfaces, as the measured value is not influenced by the STM tip structure or the tunneling current, both of which can alter the electric field.</div></div>","PeriodicalId":10340,"journal":{"name":"Chinese Journal of Physics","volume":"92 ","pages":"Pages 877-884"},"PeriodicalIF":4.6000,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0577907324004118","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Electric fields in the junction of a scanning tunneling microscope (STM) are generally considered to have a negligible impact on the vacuum level (VL) of materials. We employed field emission resonance (FER) in the STM, combined with the triangular potential model, to measure the VL of the Ag(100) surface under varying electric currents. Unexpectedly, our results reveal that the VL exhibits a linear positive energy shift with increasing electric field strength. We suggest that this Stark shift in the VL arises from local Fermi level alignment induced by the STM tip. Additionally, we examined the VL of Ag islands grown on Cu(111) and Au(111) surfaces under different currents. Despite the Ag island having a lower work function than the Cu(111) and Au(111) surfaces, the energy shift in the VL with respect to the electric field on the Ag island is almost identical to that on the substrate under the same tip structure. This suggests that the Stark shift of the VL is insensitive to the work function. These findings are crucial for utilizing FER to measure local work function variations on surfaces, as the measured value is not influenced by the STM tip structure or the tunneling current, both of which can alter the electric field.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
尖端诱导的局部费米级对准:扫描隧道显微镜配置中真空层的斯塔克偏移
扫描隧道显微镜(STM)结点中的电场通常被认为对材料的真空度(VL)影响微乎其微。我们利用 STM 中的场发射共振(FER),结合三角电位模型,测量了 Ag(100) 表面在不同电流下的真空度。出乎意料的是,我们的结果表明,随着电场强度的增加,VL 呈现线性正能量移动。我们认为,VL 的这种斯塔克偏移是由 STM 针尖诱导的局部费米级对齐引起的。此外,我们还研究了生长在铜(111)和金(111)表面的银岛在不同电流下的 VL。尽管银岛的功函数低于铜(111)和金(111)表面,但在相同的针尖结构下,银岛上 VL 相对于电场的能量移动几乎与基底上的相同。这表明 VL 的斯塔克偏移对功函数不敏感。这些发现对于利用 FER 测量表面局部功函数变化至关重要,因为测量值不受 STM 尖端结构或隧道电流的影响,而这两者都会改变电场。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Chinese Journal of Physics
Chinese Journal of Physics 物理-物理:综合
CiteScore
8.50
自引率
10.00%
发文量
361
审稿时长
44 days
期刊介绍: The Chinese Journal of Physics publishes important advances in various branches in physics, including statistical and biophysical physics, condensed matter physics, atomic/molecular physics, optics, particle physics and nuclear physics. The editors welcome manuscripts on: -General Physics: Statistical and Quantum Mechanics, etc.- Gravitation and Astrophysics- Elementary Particles and Fields- Nuclear Physics- Atomic, Molecular, and Optical Physics- Quantum Information and Quantum Computation- Fluid Dynamics, Nonlinear Dynamics, Chaos, and Complex Networks- Plasma and Beam Physics- Condensed Matter: Structure, etc.- Condensed Matter: Electronic Properties, etc.- Polymer, Soft Matter, Biological, and Interdisciplinary Physics. CJP publishes regular research papers, feature articles and review papers.
期刊最新文献
The evolution of dissipative soliton resonance from noise-like pulse via the saturable absorption to reverse saturable absorption transition within covalent organic framework saturable absorbers Manipulating dwell time and spin polarization via δ-doping for electrons in spin-orbit-coupling modulated magnetic nanostructure Simultaneous cooling of high-frequency difference resonators through voltage modulation and intracavity-squeezed light Dynamical analysis and hardware verification of a new multistable memristive hyperchaotic map Ultrahigh quality factor cavity based on double dielectric nanocylinder metasurfaces
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1