{"title":"Development of an efficient UV absorber and reusable SERS chip by buried Ag ion implantation in Si substrate","authors":"Sudip Bhowmick , Biswarup Satpati , Debasree Chowdhury , Prasanta Karmakar","doi":"10.1016/j.cap.2024.10.013","DOIUrl":null,"url":null,"abstract":"<div><div>We report the formation of a buried ultra-thin layer of Ag clusters in a Si substrate through 6 keV Ag⁺ ion beam implantation, which exhibits a significant enhancement of the Raman signal. This suggests the development of a reliable and reusable chip for Surface Enhanced Raman Spectroscopy (SERS). The presence of a clustered Ag layer in Si also leads to pronounced UV absorption, thus expanding the material's potential in safeguarding from photo-degradation and optoelectronic devices. Physicochemical analysis conducted using X-ray photoelectron spectroscopy (XPS), Atomic Force Microscopy, and cross-sectional Transmission Electron Microscopy (TEM) confirms the formation of a 9 nm buried layer of Ag clusters within the amorphous Si layer. This method of Ag ion implantation in Si offers a simple approach to engineering surfaces with enhanced optical and spectroscopic characteristics.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":"Pages 267-274"},"PeriodicalIF":2.4000,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Current Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1567173924002268","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
We report the formation of a buried ultra-thin layer of Ag clusters in a Si substrate through 6 keV Ag⁺ ion beam implantation, which exhibits a significant enhancement of the Raman signal. This suggests the development of a reliable and reusable chip for Surface Enhanced Raman Spectroscopy (SERS). The presence of a clustered Ag layer in Si also leads to pronounced UV absorption, thus expanding the material's potential in safeguarding from photo-degradation and optoelectronic devices. Physicochemical analysis conducted using X-ray photoelectron spectroscopy (XPS), Atomic Force Microscopy, and cross-sectional Transmission Electron Microscopy (TEM) confirms the formation of a 9 nm buried layer of Ag clusters within the amorphous Si layer. This method of Ag ion implantation in Si offers a simple approach to engineering surfaces with enhanced optical and spectroscopic characteristics.
期刊介绍：
Current Applied Physics (Curr. Appl. Phys.) is a monthly published international journal covering all the fields of applied science investigating the physics of the advanced materials for future applications.
Other areas covered: Experimental and theoretical aspects of advanced materials and devices dealing with synthesis or structural chemistry, physical and electronic properties, photonics, engineering applications, and uniquely pertinent measurement or analytical techniques.
Current Applied Physics, published since 2001, covers physics, chemistry and materials science, including bio-materials, with their engineering aspects. It is a truly interdisciplinary journal opening a forum for scientists of all related fields, a unique point of the journal discriminating it from other worldwide and/or Pacific Rim applied physics journals.
Regular research papers, letters and review articles with contents meeting the scope of the journal will be considered for publication after peer review.
The Journal is owned by the Korean Physical Society.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
