{"title":"Active Surface Passivation for mesa type short-wave infrared InGaAs Photodetectors","authors":"Necati Işık , Serdar Kocaman","doi":"10.1016/j.infrared.2024.105590","DOIUrl":null,"url":null,"abstract":"<div><div>We propose a gate-controlled device structure for mesa-type infrared photon detectors with the means of improving surface conditions. Additional terminal added to the pn-junction allows surface charges to be manipulated by applying a constant E-field through a metal–oxide–semiconductor (MOS) structure. Short-wave infrared (SWIR) Indium Gallium Arsenide (InGaAs) sample with a cut-off wavelength of 1.69 <span><math><mi>μ</mi></math></span>m is characterized. A theoretical framework is provided to gating mechanism. Experimental results show that, the shunt component of the dark current improved as high as 63% by interrupting the channel formation on the surface. Further improvements in the generation–recombination (GR) current is noted at more than 90% at 300 K. The effective GR lifetime of 20 <span><math><mi>μ</mi></math></span>s is obtained under 50 V/<span><math><mi>μ</mi></math></span>m surface-gate bias.</div></div>","PeriodicalId":13549,"journal":{"name":"Infrared Physics & Technology","volume":"143 ","pages":"Article 105590"},"PeriodicalIF":3.1000,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared Physics & Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1350449524004742","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
引用次数: 0
Abstract
We propose a gate-controlled device structure for mesa-type infrared photon detectors with the means of improving surface conditions. Additional terminal added to the pn-junction allows surface charges to be manipulated by applying a constant E-field through a metal–oxide–semiconductor (MOS) structure. Short-wave infrared (SWIR) Indium Gallium Arsenide (InGaAs) sample with a cut-off wavelength of 1.69 m is characterized. A theoretical framework is provided to gating mechanism. Experimental results show that, the shunt component of the dark current improved as high as 63% by interrupting the channel formation on the surface. Further improvements in the generation–recombination (GR) current is noted at more than 90% at 300 K. The effective GR lifetime of 20 s is obtained under 50 V/m surface-gate bias.
期刊介绍：
The Journal covers the entire field of infrared physics and technology: theory, experiment, application, devices and instrumentation. Infrared'' is defined as covering the near, mid and far infrared (terahertz) regions from 0.75um (750nm) to 1mm (300GHz.) Submissions in the 300GHz to 100GHz region may be accepted at the editors discretion if their content is relevant to shorter wavelengths. Submissions must be primarily concerned with and directly relevant to this spectral region.
Its core topics can be summarized as the generation, propagation and detection, of infrared radiation; the associated optics, materials and devices; and its use in all fields of science, industry, engineering and medicine.
Infrared techniques occur in many different fields, notably spectroscopy and interferometry; material characterization and processing; atmospheric physics, astronomy and space research. Scientific aspects include lasers, quantum optics, quantum electronics, image processing and semiconductor physics. Some important applications are medical diagnostics and treatment, industrial inspection and environmental monitoring.
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