Flux growth of Cs1-xRbxBF3 (B = Ca, Sr) crystals by the micro-pulling-down method

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-10-16 DOI:10.1016/j.jcrysgro.2024.127919
V. Vaněček , T. Horiai , M. Yoshino , A. Yamaji , A. Yoshikawa , M. Nikl
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Abstract

The possibility of growing Cs1-xRbxBF3 (B = Ca, Sr) crystals by micro-pulling-down was investigated due to their potential for application in ultrafast scintillation detectors. A LiF flux was applied to lower the melting point and therefore suppress evaporation of CsF from the melt. Suitable growth conditions were obtained through careful choice of the hot zone elements. A crucible with minimal nozzle length improved mass transport and an afterheater with four windows provided a steep temperature gradient. Inclusion and crack-free crystals of Cs1-xRbxCaF3 (x = 0, 0.1, 0.25, 0.5, 0.75, 0.9, and 1) and CsCa1-xSrxF3 (x = 0, 0.1, and 0.25) were grown under optimized conditions. Despite the hygroscopic nature of the heavy alkali metal fluorides, all the grown crystals are non-hygroscopic which significantly improves their application potential. Growth of CsCa1-xSrxF3 crystals with higher Sr concentration was complicated by the low solubility of SrF2 in the LiF-CsF melt and the hygroscopic nature of the CsSrF3. The formation of solid solution in the Cs1-xRbxCaF3 and CsCa1-xSrxF3 systems was investigated through the dependence of lattice parameters on nominal composition.
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用微拉伸法生长 Cs1-xRbxBF3(B = Ca、Sr)晶体的通量
由于 Cs1-xRbxBF3 (B = Ca、Sr)晶体具有应用于超快闪烁探测器的潜力,我们研究了通过微拉伸法生长 Cs1-xRbxBF3 (B = Ca、Sr)晶体的可能性。研究中使用了 LiF 助熔剂来降低熔点,从而抑制 CsF 从熔体中蒸发。通过仔细选择热区元件,获得了合适的生长条件。喷嘴长度最小的坩埚改善了质量传输,带有四个窗口的后加热器提供了陡峭的温度梯度。在优化的条件下,生长出了 Cs1-xRbxCaF3 (x = 0、0.1、0.25、0.5、0.75、0.9 和 1)和 CsCa1-xSrxF3 (x = 0、0.1 和 0.25)的无夹杂和无裂纹晶体。尽管重碱金属氟化物具有吸湿性,但所有生长出的晶体都不吸湿,这大大提高了它们的应用潜力。由于 SrF2 在 LiF-CsF 熔体中的溶解度较低以及 CsSrF3 的吸湿性,生长较高 Sr 浓度的 CsCa1-xSrxF3 晶体变得复杂。通过晶格参数对标称成分的依赖性,研究了 Cs1-xRbxCaF3 和 CsCa1-xSrxF3 系统中固溶体的形成。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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