{"title":"Visual detection of thermal microvariation characteristics of transparent layer of quartz crucible","authors":"Qian Zhao , Zheng-Li Miao","doi":"10.1016/j.jcrysgro.2024.127936","DOIUrl":null,"url":null,"abstract":"<div><div>Aiming at detecting and locating bubbles in transparent layer of quartz crucible during the growth of monocrystalline silicon, an improved YOLOv5s model algorithm is proposed in this paper to achieve efficient and accurate crucible bubble detection. Optimize the anchor box through the K-means algorithm to adapt to the bubble dataset before and after the use of the crucible. Utilize the FasterNet backbone network to extract contextual information, enhancing target detection effectiveness. Additionally, the ECA attention mechanism is added to enhance information exchange and improve the accuracy of small target detection. Experimental results show that the improved algorithm performs significantly in bubble detection. For bubble detection before and after use, mAP increased by 2.1 % and 3.29 %, respectively. As usage time increases, the size, shape, and distribution of bubbles in the transparent layer of the quartz crucible change significantly, directly affecting the crucible’s effectiveness. Regular monitoring and evaluation of crucible bubble changes are crucial for maintaining stability and safety in the production process. Further research could explore how these findings can optimize crucible design and usage, improving performance and longevity.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127936"},"PeriodicalIF":1.7000,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824003749","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
Aiming at detecting and locating bubbles in transparent layer of quartz crucible during the growth of monocrystalline silicon, an improved YOLOv5s model algorithm is proposed in this paper to achieve efficient and accurate crucible bubble detection. Optimize the anchor box through the K-means algorithm to adapt to the bubble dataset before and after the use of the crucible. Utilize the FasterNet backbone network to extract contextual information, enhancing target detection effectiveness. Additionally, the ECA attention mechanism is added to enhance information exchange and improve the accuracy of small target detection. Experimental results show that the improved algorithm performs significantly in bubble detection. For bubble detection before and after use, mAP increased by 2.1 % and 3.29 %, respectively. As usage time increases, the size, shape, and distribution of bubbles in the transparent layer of the quartz crucible change significantly, directly affecting the crucible’s effectiveness. Regular monitoring and evaluation of crucible bubble changes are crucial for maintaining stability and safety in the production process. Further research could explore how these findings can optimize crucible design and usage, improving performance and longevity.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.