Junfeng Li , Bing Zhou , D.G. Piliptsou , Hui Sun , Yanxia Wu , Hongjun Hei , Jie Gao , Shengwang Yu
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引用次数: 0
Abstract
A tunable locally ordered amorphous carbon layer was pre-implanted on the iridium (Ir) composite substrate using a multi-excitation source plasma coating system. The nucleation interface was mainly studied by scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. The results show that by designing and modulating the content and ordering of sp2/sp3 hybridized carbon bonds in the amorphous carbon on the surface of Ir thin films, an overall ordered diamond nucleation layer was obtained. When the pulse frequency of the carbon source was regulated to 9 Hz, the (100) diamond grains were uniformly aligned without the appearance of twins after 4 h of growth, and the nucleation density was 7.5 × 109 cm−2, which was subsequently expected to obtain single-crystal diamond by grain boundary annihilation. Based on the Ir-amorphous carbon pre-growth layer, it can accelerate the dissolution-precipitation process of carbon ions into the Ir film to form a supersaturated solid solution during the bias nucleation, and increase the nucleation sites, which is of great significance for improving the nucleation density of large-size single-crystal diamond heterogeneous epitaxy.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.