Growth of copper single crystal using cone die Czochralski method

Abstract

Copper (Cu) and other metal single crystals are useful as substrates for the deposition of atomic layer materials for many electronic applications, but the growth of large-sized single crystals is difficult to achieve. Characteristics of the metal material, namely seed elongation and intense cooling radiation at high temperatures during crystal growth, are the main challenges encountered when growing ingots with large diameters. These problems can be resolved by optimizing the crystal growth parameters. By adjusting the shoulder formation angle of the ingot shape to approximately 20° to 40°, we are able to grow a large (1-inch diameter, 30 mm length) single crystal of metal Cu using the Czochralski (CZ) method. However, the generation of suspended solids and film impurities such as reactants and precipitates and their nucleation, growth, and solidification, limited the further increase in size of the Cu crystal. Using the cone-shape die CZ (CD-CZ) method solves this problem and a 2-inch diameter Cu single crystal is successfully grown. This is the world’s largest single crystal metal grown using this method and it paves the way for the growth of other metal crystals.