Enhancement of optoelectronic properties of Vanadium nitride/porous silicon heterojunction photodetector prepared by electrochemical etching and reactive DC sputtering

IF 3.2 4区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY Journal of the Indian Chemical Society Pub Date : 2024-10-18 DOI:10.1016/j.jics.2024.101432
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Abstract

In this work, vanadium nitride (VN) thin films were deposited on porous silicon using the DC sputtering technique. The porous silicon was prepared using the electrochemical etching method at various current densities. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Fourier transform infrared (FTIR) spectroscopy, UV–visible spectrometry, and photoluminescence (PL) spectroscopy were used to study the structural, morphological, chemical, and optical characteristics of the vanadium nitride and porous silicon. X-ray diffraction studies showed that the deposited vanadium nitride film was crystalline in nature with a cubic structure. The VN particles were found to be embedded inside the pores of the porous silicon. The crystallite size of the VN film was 8 nm. The optical absorption results showed that the optical energy gap of vanadium nitride was 2.98 eV. The photoluminescence spectra revealed the presence of four emission peaks located at 441, 496, 541, and 720 nm. The electrical properties of the VN/PSi heterojunction, including dark and illuminated current-voltage characteristics as a function of etching current density, were investigated. The best ideality factor was 3.1 for heterojunction prepared at a current density of 8 mA/cm2. A responsivity of 3.7 A/W and a detectivity of 6.5 × 1011 Jones at 500 nm were found for the photodetector fabricated at a current density of 8 mA/cm2. The (I-t) response of the photodetectors were determined.

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通过电化学蚀刻和反应性直流溅射制备的氮化钒/多孔硅异质结光电探测器的光电性能提升
在这项工作中,使用直流溅射技术在多孔硅上沉积了氮化钒(VN)薄膜。多孔硅是采用电化学蚀刻法在不同电流密度下制备的。利用 X 射线衍射 (XRD)、场发射扫描电子显微镜 (FE-SEM)、傅立叶变换红外光谱 (FTIR)、紫外可见光谱法和光致发光 (PL) 光谱法研究了氮化钒和多孔硅的结构、形态、化学和光学特性。X 射线衍射研究表明,沉积的氮化钒薄膜是立方结构的晶体。氮化钒颗粒被嵌入多孔硅的孔隙中。氮化钒薄膜的晶体尺寸为 8 纳米。光吸收结果表明,氮化钒的光能隙为 2.98 eV。光致发光光谱显示,在 441、496、541 和 720 纳米波长处存在四个发射峰。研究了 VN/PSi 异质结的电学特性,包括暗电流和光照电流-电压特性与蚀刻电流密度的函数关系。在电流密度为 8 mA/cm2 时制备的异质结的最佳理想因子为 3.1。电流密度为 8 mA/cm2 时,光电探测器的响应率为 3.7 A/W,500 nm 时的检测率为 6.5 × 1011 Jones。光电探测器的(I-t)响应已经测定。
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来源期刊
CiteScore
3.50
自引率
7.70%
发文量
492
审稿时长
3-8 weeks
期刊介绍: The Journal of the Indian Chemical Society publishes original, fundamental, theorical, experimental research work of highest quality in all areas of chemistry, biochemistry, medicinal chemistry, electrochemistry, agrochemistry, chemical engineering and technology, food chemistry, environmental chemistry, etc.
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