Enhancement of optoelectronic properties of Vanadium nitride/porous silicon heterojunction photodetector prepared by electrochemical etching and reactive DC sputtering

IF 3.2 4区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY Journal of the Indian Chemical Society Pub Date : 2024-10-18 DOI:10.1016/j.jics.2024.101432
Sarab T. Kasim , Hasan A. Hadi , Raid A. Ismail
{"title":"Enhancement of optoelectronic properties of Vanadium nitride/porous silicon heterojunction photodetector prepared by electrochemical etching and reactive DC sputtering","authors":"Sarab T. Kasim ,&nbsp;Hasan A. Hadi ,&nbsp;Raid A. Ismail","doi":"10.1016/j.jics.2024.101432","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, vanadium nitride (VN) thin films were deposited on porous silicon using the DC sputtering technique. The porous silicon was prepared using the electrochemical etching method at various current densities. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Fourier transform infrared (FTIR) spectroscopy, UV–visible spectrometry, and photoluminescence (PL) spectroscopy were used to study the structural, morphological, chemical, and optical characteristics of the vanadium nitride and porous silicon. X-ray diffraction studies showed that the deposited vanadium nitride film was crystalline in nature with a cubic structure. The VN particles were found to be embedded inside the pores of the porous silicon. The crystallite size of the VN film was 8 nm. The optical absorption results showed that the optical energy gap of vanadium nitride was 2.98 eV. The photoluminescence spectra revealed the presence of four emission peaks located at 441, 496, 541, and 720 nm. The electrical properties of the VN/PSi heterojunction, including dark and illuminated current-voltage characteristics as a function of etching current density, were investigated. The best ideality factor was 3.1 for heterojunction prepared at a current density of 8 mA/cm<sup>2</sup>. A responsivity of 3.7 A/W and a detectivity of 6.5 × 10<sup>11</sup> Jones at 500 nm were found for the photodetector fabricated at a current density of 8 mA/cm<sup>2</sup>. The (I-t) response of the photodetectors were determined.</div></div>","PeriodicalId":17276,"journal":{"name":"Journal of the Indian Chemical Society","volume":"101 11","pages":"Article 101432"},"PeriodicalIF":3.2000,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Indian Chemical Society","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0019452224003121","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

In this work, vanadium nitride (VN) thin films were deposited on porous silicon using the DC sputtering technique. The porous silicon was prepared using the electrochemical etching method at various current densities. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Fourier transform infrared (FTIR) spectroscopy, UV–visible spectrometry, and photoluminescence (PL) spectroscopy were used to study the structural, morphological, chemical, and optical characteristics of the vanadium nitride and porous silicon. X-ray diffraction studies showed that the deposited vanadium nitride film was crystalline in nature with a cubic structure. The VN particles were found to be embedded inside the pores of the porous silicon. The crystallite size of the VN film was 8 nm. The optical absorption results showed that the optical energy gap of vanadium nitride was 2.98 eV. The photoluminescence spectra revealed the presence of four emission peaks located at 441, 496, 541, and 720 nm. The electrical properties of the VN/PSi heterojunction, including dark and illuminated current-voltage characteristics as a function of etching current density, were investigated. The best ideality factor was 3.1 for heterojunction prepared at a current density of 8 mA/cm2. A responsivity of 3.7 A/W and a detectivity of 6.5 × 1011 Jones at 500 nm were found for the photodetector fabricated at a current density of 8 mA/cm2. The (I-t) response of the photodetectors were determined.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
通过电化学蚀刻和反应性直流溅射制备的氮化钒/多孔硅异质结光电探测器的光电性能提升
在这项工作中,使用直流溅射技术在多孔硅上沉积了氮化钒(VN)薄膜。多孔硅是采用电化学蚀刻法在不同电流密度下制备的。利用 X 射线衍射 (XRD)、场发射扫描电子显微镜 (FE-SEM)、傅立叶变换红外光谱 (FTIR)、紫外可见光谱法和光致发光 (PL) 光谱法研究了氮化钒和多孔硅的结构、形态、化学和光学特性。X 射线衍射研究表明,沉积的氮化钒薄膜是立方结构的晶体。氮化钒颗粒被嵌入多孔硅的孔隙中。氮化钒薄膜的晶体尺寸为 8 纳米。光吸收结果表明,氮化钒的光能隙为 2.98 eV。光致发光光谱显示,在 441、496、541 和 720 纳米波长处存在四个发射峰。研究了 VN/PSi 异质结的电学特性,包括暗电流和光照电流-电压特性与蚀刻电流密度的函数关系。在电流密度为 8 mA/cm2 时制备的异质结的最佳理想因子为 3.1。电流密度为 8 mA/cm2 时,光电探测器的响应率为 3.7 A/W,500 nm 时的检测率为 6.5 × 1011 Jones。光电探测器的(I-t)响应已经测定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
3.50
自引率
7.70%
发文量
492
审稿时长
3-8 weeks
期刊介绍: The Journal of the Indian Chemical Society publishes original, fundamental, theorical, experimental research work of highest quality in all areas of chemistry, biochemistry, medicinal chemistry, electrochemistry, agrochemistry, chemical engineering and technology, food chemistry, environmental chemistry, etc.
期刊最新文献
Study on indole CB2 ligands based on 3D-QSAR, molecular docking and molecular dynamics simulation Synthesis of metallic surfactants from Jatropha oil and study of it's molecular structure and antimicrobial activity on plant pathogen Xanthomonas campestris Investigating the Linum usitatisimum mucilage synergistic amalgamation of metal oxide electrodes for super-capacitive applications A potent moiety of (E)-5-(4-(5-chlorothiophene-2-carbonyl) piperazin-1-yl)-N'-(substituted methylene) benzofuran-2-carbohydrazide: Molecular docking, synthesis and antimicrobial evaluation Development of epoxy/flyash composites containing halloysite nanotubes: Mechanical, morphological, and thermal degradation kinetics
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1