L. Tondelli;R. Asanovski;A. J. Scholten;T. V. Dinh;S.-W. Tam;R. M. T. Pijper;L. Selmi
{"title":"Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes","authors":"L. Tondelli;R. Asanovski;A. J. Scholten;T. V. Dinh;S.-W. Tam;R. M. T. Pijper;L. Selmi","doi":"10.1109/TED.2024.3469187","DOIUrl":null,"url":null,"abstract":"Accurate determination of thermal resistances having a clear physical interpretation is crucial for analyzing self-heating effects (SHEs) in bulk FinFETs and ensuring reliable circuit operation. In this article, we use extensive electrothermal simulations, calibrated against experiments, to validate a popular method to monitor SHEs based on the measured AC output conductance. The results confirm that nanoscale silicon fins exhibit degraded thermal conductivity compared with the bulk silicon case. Then, we explore the relationship between the temperature extracted by the output conductance method and the maximum temperature inside the fin (which is a useful parameter to study device reliability) as a function of device bias and dimensions, providing a few projections toward scaled technology nodes. Our results show that the following hold: 1) the overtemperature extracted with the AC output conductance method represents an average overtemperature across the device active area and 2) the AC conductance method largely underestimates the peak temperature of long-channel devices; less so for short-channel ones. In this latter case, however, the difference between the above temperatures changes appreciably as a function of gate voltage.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10709358/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Accurate determination of thermal resistances having a clear physical interpretation is crucial for analyzing self-heating effects (SHEs) in bulk FinFETs and ensuring reliable circuit operation. In this article, we use extensive electrothermal simulations, calibrated against experiments, to validate a popular method to monitor SHEs based on the measured AC output conductance. The results confirm that nanoscale silicon fins exhibit degraded thermal conductivity compared with the bulk silicon case. Then, we explore the relationship between the temperature extracted by the output conductance method and the maximum temperature inside the fin (which is a useful parameter to study device reliability) as a function of device bias and dimensions, providing a few projections toward scaled technology nodes. Our results show that the following hold: 1) the overtemperature extracted with the AC output conductance method represents an average overtemperature across the device active area and 2) the AC conductance method largely underestimates the peak temperature of long-channel devices; less so for short-channel ones. In this latter case, however, the difference between the above temperatures changes appreciably as a function of gate voltage.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.