{"title":"Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology","authors":"Yuxin Liu;Qiang Liu;Jin Chen;Zhiqiang Mu;Xing Wei;Wenjie Yu","doi":"10.1109/JEDS.2024.3478750","DOIUrl":null,"url":null,"abstract":"The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as \n<inline-formula> <tex-math>$V_{\\mathrm { d}}$ </tex-math></inline-formula>\n increases, which has rarely been reported in devices with other gate structures. In particular, the SS of the device reaches the minimum ~0.1mV/dec with no discernable hysteresis window at \n<inline-formula> <tex-math>$V_{\\mathrm { d}} {=} 4.5$ </tex-math></inline-formula>\nV under ambient condition. Further device simulation strongly confirms the unique role of the GAA controllability over the hysteresis-free kink process. These findings contribute to a better understanding of kink behaviors within GAA device for potential application.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"941-947"},"PeriodicalIF":2.4000,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10714381","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10714381/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as
$V_{\mathrm { d}}$
increases, which has rarely been reported in devices with other gate structures. In particular, the SS of the device reaches the minimum ~0.1mV/dec with no discernable hysteresis window at
$V_{\mathrm { d}} {=} 4.5$
V under ambient condition. Further device simulation strongly confirms the unique role of the GAA controllability over the hysteresis-free kink process. These findings contribute to a better understanding of kink behaviors within GAA device for potential application.
期刊介绍：
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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