I. A. Surazhevsky, K. Yu. Chernoglazov, I. V. Alyaev, Yu. V. Grischenko, D. V. Ichyotkin, A. V. Emelyanov, T. E. Grigoriev, A. D. Kalyonov, A. I. Iliasov, V. A. Demin, V. V. Rylkov
{"title":"Resistive Memory in 2T1R Architecture Based on Si MOSFETs and Nanocomposite Memristors","authors":"I. A. Surazhevsky, K. Yu. Chernoglazov, I. V. Alyaev, Yu. V. Grischenko, D. V. Ichyotkin, A. V. Emelyanov, T. E. Grigoriev, A. D. Kalyonov, A. I. Iliasov, V. A. Demin, V. V. Rylkov","doi":"10.1134/S2635167624601657","DOIUrl":null,"url":null,"abstract":"<div><p>A manufacturing sequence for the formation of controlled memory in the 2T1R architecture using Si MOSFETs (metal-oxide-semiconductor field-effect transistor) and memristor crossbars based on thin layers of CoFeB-LiNbO<sub>3</sub> nanocomposite and a-LiNbO<sub>3</sub> is developed. It is shown that when using Cu top electrodes in memristors, relatively small resistive-switching voltages and currents (2.5 V and 0.4 mA) are achieved, which are suitable for creating a memory microchip within the MPW technology service (https://mpw.miet.ru/).</p></div>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 3","pages":"468 - 474"},"PeriodicalIF":0.8000,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnologies in Russia","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S2635167624601657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
A manufacturing sequence for the formation of controlled memory in the 2T1R architecture using Si MOSFETs (metal-oxide-semiconductor field-effect transistor) and memristor crossbars based on thin layers of CoFeB-LiNbO3 nanocomposite and a-LiNbO3 is developed. It is shown that when using Cu top electrodes in memristors, relatively small resistive-switching voltages and currents (2.5 V and 0.4 mA) are achieved, which are suitable for creating a memory microchip within the MPW technology service (https://mpw.miet.ru/).
期刊介绍：
Nanobiotechnology Reports publishes interdisciplinary research articles on fundamental aspects of the structure and properties of nanoscale objects and nanomaterials, polymeric and bioorganic molecules, and supramolecular and biohybrid complexes, as well as articles that discuss technologies for their preparation and processing, and practical implementation of products, devices, and nature-like systems based on them. The journal publishes original articles and reviews that meet the highest scientific quality standards in the following areas of science and technology studies: self-organizing structures and nanoassemblies; nanostructures, including nanotubes; functional and structural nanomaterials; polymeric, bioorganic, and hybrid nanomaterials; devices and products based on nanomaterials and nanotechnology; nanobiology and genetics, and omics technologies; nanobiomedicine and nanopharmaceutics; nanoelectronics and neuromorphic computing systems; neurocognitive systems and technologies; nanophotonics; natural science methods in a study of cultural heritage items; metrology, standardization, and monitoring in nanotechnology.
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