Experimental and Theoretical Approaches for Detecting Latent Lateral Leakage Current of Organic Light-Emitting Diodes

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-10-11 DOI:10.1021/acsaelm.4c0099710.1021/acsaelm.4c00997
Kazunori Morimoto, Ryuichi Satoh, Seonghee Noh and Takayuki Miyamae*, 
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Abstract

High-resolution organic light-emitting diode (OLED) displays often suffer from image quality deterioration due to lateral leakage current (LLC). We performed the detection of LLC using operando electric-field-induced doubly resonant sum-frequency generation (EFI-DR-SFG) measurements under conditions where the electric potential, formed by the LLC to an adjacent pixel, was below the emission threshold voltage for the use of OLEDs. The EFI-DR-SFG outputs of the voltage-applied pixel and its adjacent pixel (nonvoltage-applied pixel) were compared as voltage was applied to the OLEDs. In the case of the OLEDs without LLC generation, changes in the EFI-SFG output according to the applied voltage were confirmed only in the voltage-applied pixel, and the SFG output did not change in the adjacent pixel. However, in the case of OLEDs with LLC, changes in SFG output could be observed in the adjacent pixel depending on the electric potential formed by the LLC. These results can potentially lead toward the detection and precise control of hidden LLC prior to light emission, which could not be detected by the conventional emission method.

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检测有机发光二极管潜在侧漏电流的实验和理论方法
高分辨率有机发光二极管(OLED)显示屏经常因横向泄漏电流(LLC)而导致图像质量下降。我们使用操作电场诱导双谐振和频发生(EFI-DR-SFG)测量方法,在LLC对相邻像素形成的电动势低于OLED使用的发射阈值电压的条件下,对LLC进行了检测。在 OLED 上施加电压时,比较了施加电压的像素和相邻像素(未施加电压的像素)的 EFI-DR-SFG 输出。在不产生 LLC 的 OLED 中,只有施加电压的像素的 EFI-SFG 输出随施加电压的变化而变化,相邻像素的 SFG 输出没有变化。然而,在具有 LLC 的 OLED 中,根据 LLC 形成的电动势,可以在相邻像素中观察到 SFG 输出的变化。这些结果有可能导致在光发射前检测和精确控制隐藏的 LLC,而传统的发射方法无法检测到这种情况。
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CiteScore
7.20
自引率
4.30%
发文量
567
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