A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package

Abstract

The conventional TO-247-3 packages with single-sided cooling limit the thermal and electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided cooling press-pack (PP) packaging approach for the discrete SiC MOSFET device is proposed to optimize its thermal and electrical performances. First, a double-sided cooling PP structure for the discrete SiC MOSFET devices is designed with a copper foam gate pin and an embedded fixture. Then, based on finite element simulations, the steady-state thermal and electrical performances of the discrete SiC MOSFET device with the double-sided cooling PP package are analyzed, and the parasitic inductance of the designed SiC MOSFET device is extracted by the ANSYS Q3D software. Finally, a prototype of the double-sided cooling PP SiC MOSFET device is fabricated, and test platforms are established to verify its performance. The research findings demonstrate that the designed double-sided cooling PP SiC MOSFET device can reduce thermal resistance and switching loss by 47.4 % and 42.3%, respectively.