{"title":"Inhibiting the formation of interfacial voids in Cu/In/Cu microbump via Zn doping into Cu substrate","authors":"Ta-Wei Lin, Zih-You Wu, Yin-Ku Lee, Zi-Xu Chen, Tsong-Pyng Perng, Jenq-Gong Duh","doi":"10.1016/j.matchemphys.2024.130090","DOIUrl":null,"url":null,"abstract":"<div><div>To address warpage issues in 3D-IC, low temperature soldering technology such as Cu/In bonding has been developed in recent years. However, the formation of Kirkendall voids at the original Cu/In interface would lead to degradation of joint reliability. By adding Zn, the diffusional flux of Cu was inhibited, and the numbers of interfacial voids larger than 50 nm decreased substantially by 66 % at top interface and 58 % at bottom interface, respectively. In this study, Cu–15Zn/In/Cu system was investigated and could be regarded as a promising option for advanced electronic packaging in the future.</div></div>","PeriodicalId":18227,"journal":{"name":"Materials Chemistry and Physics","volume":"329 ","pages":"Article 130090"},"PeriodicalIF":4.3000,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Chemistry and Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0254058424012185","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
To address warpage issues in 3D-IC, low temperature soldering technology such as Cu/In bonding has been developed in recent years. However, the formation of Kirkendall voids at the original Cu/In interface would lead to degradation of joint reliability. By adding Zn, the diffusional flux of Cu was inhibited, and the numbers of interfacial voids larger than 50 nm decreased substantially by 66 % at top interface and 58 % at bottom interface, respectively. In this study, Cu–15Zn/In/Cu system was investigated and could be regarded as a promising option for advanced electronic packaging in the future.
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Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.
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