{"title":"High sensitive diamond Schottky diode temperature sensor based on selective grown diamond film","authors":"","doi":"10.1016/j.matlet.2024.137630","DOIUrl":null,"url":null,"abstract":"<div><div>The temperature dependence I-V characteristics of the diamond Schottky diode based on selective grown diamond film has been characterized in a range from room temperature up to 473 K. The selective growth of diamond between tungsten mask can contain some acceptor impurities without intentionally doping. In the range 298–473 K, the I-V curves show an obvious temperature dependency. The voltage sensitivity is segmented into two ranges: 298 K–373 K and 373 K–473 K. The maximum sensitivities are 104 mV/K in the range 298 K–373 K and 18 mV/K in the range 373 K–473 K. Repeated measurement exhibits a good agreement with the first time’s results, indicating that the barrier between tungsten and selective grown diamond is thermally stable.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X24017701","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The temperature dependence I-V characteristics of the diamond Schottky diode based on selective grown diamond film has been characterized in a range from room temperature up to 473 K. The selective growth of diamond between tungsten mask can contain some acceptor impurities without intentionally doping. In the range 298–473 K, the I-V curves show an obvious temperature dependency. The voltage sensitivity is segmented into two ranges: 298 K–373 K and 373 K–473 K. The maximum sensitivities are 104 mV/K in the range 298 K–373 K and 18 mV/K in the range 373 K–473 K. Repeated measurement exhibits a good agreement with the first time’s results, indicating that the barrier between tungsten and selective grown diamond is thermally stable.
期刊介绍：
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
Contributions include, but are not limited to, a variety of topics such as:
• Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors
• Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart
• Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction
• Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots.
• Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing.
• Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic
• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive
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