{"title":"Plasma-metal junction: A junction with negative turn-on voltage","authors":"Sneha Latha Kommuguri, Smrutishree Pratihary, Thangjam Rishikanta Singh, Suraj Kumar Sinha","doi":"10.1016/j.physleta.2024.129994","DOIUrl":null,"url":null,"abstract":"<div><div>Unlike junctions in solid-state devices, a plasma-metal junction (pm-junction) is a junction of classical and quantum electrons. The plasma electrons are Maxwellian in nature, while metal electrons obey the Fermi-Dirac distribution. In this experiment, the current-voltage characteristics of solid-state devices that form homo or hetero-junction are compared to the pm-junction. Observation shows that the turn-on voltage for pn-junction is 0.5<em>V</em> and decreases to 0.24<em>V</em> for metal-semiconductor junction. However, the pm-junction's turn-on voltage was lowered to a negative value of <span><math><mo>−</mo><mn>7.0</mn><mi>V</mi></math></span>. The devices with negative turn-on voltage are suitable for high-frequency operations. Further, observations show that the current-voltage characteristics of the pm-junction depend on the metal's work function, and the turn-on voltage remains unchanged. This result validates the applicability of the energy-band model for the pm-junction. We present a perspective metal-oxide-plasma (MOP), a gaseous electronic device, as an alternative to metal-oxide-semiconductor (MOS), based on the new basic understanding developed.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":"527 ","pages":"Article 129994"},"PeriodicalIF":2.3000,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics Letters A","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0375960124006881","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Unlike junctions in solid-state devices, a plasma-metal junction (pm-junction) is a junction of classical and quantum electrons. The plasma electrons are Maxwellian in nature, while metal electrons obey the Fermi-Dirac distribution. In this experiment, the current-voltage characteristics of solid-state devices that form homo or hetero-junction are compared to the pm-junction. Observation shows that the turn-on voltage for pn-junction is 0.5V and decreases to 0.24V for metal-semiconductor junction. However, the pm-junction's turn-on voltage was lowered to a negative value of . The devices with negative turn-on voltage are suitable for high-frequency operations. Further, observations show that the current-voltage characteristics of the pm-junction depend on the metal's work function, and the turn-on voltage remains unchanged. This result validates the applicability of the energy-band model for the pm-junction. We present a perspective metal-oxide-plasma (MOP), a gaseous electronic device, as an alternative to metal-oxide-semiconductor (MOS), based on the new basic understanding developed.
期刊介绍:
Physics Letters A offers an exciting publication outlet for novel and frontier physics. It encourages the submission of new research on: condensed matter physics, theoretical physics, nonlinear science, statistical physics, mathematical and computational physics, general and cross-disciplinary physics (including foundations), atomic, molecular and cluster physics, plasma and fluid physics, optical physics, biological physics and nanoscience. No articles on High Energy and Nuclear Physics are published in Physics Letters A. The journal''s high standard and wide dissemination ensures a broad readership amongst the physics community. Rapid publication times and flexible length restrictions give Physics Letters A the edge over other journals in the field.