Plasma-metal junction: A junction with negative turn-on voltage

IF 2.3 3区 物理与天体物理 Q2 PHYSICS, MULTIDISCIPLINARY Physics Letters A Pub Date : 2024-10-30 DOI:10.1016/j.physleta.2024.129994
{"title":"Plasma-metal junction: A junction with negative turn-on voltage","authors":"","doi":"10.1016/j.physleta.2024.129994","DOIUrl":null,"url":null,"abstract":"<div><div>Unlike junctions in solid-state devices, a plasma-metal junction (pm-junction) is a junction of classical and quantum electrons. The plasma electrons are Maxwellian in nature, while metal electrons obey the Fermi-Dirac distribution. In this experiment, the current-voltage characteristics of solid-state devices that form homo or hetero-junction are compared to the pm-junction. Observation shows that the turn-on voltage for pn-junction is 0.5<em>V</em> and decreases to 0.24<em>V</em> for metal-semiconductor junction. However, the pm-junction's turn-on voltage was lowered to a negative value of <span><math><mo>−</mo><mn>7.0</mn><mi>V</mi></math></span>. The devices with negative turn-on voltage are suitable for high-frequency operations. Further, observations show that the current-voltage characteristics of the pm-junction depend on the metal's work function, and the turn-on voltage remains unchanged. This result validates the applicability of the energy-band model for the pm-junction. We present a perspective metal-oxide-plasma (MOP), a gaseous electronic device, as an alternative to metal-oxide-semiconductor (MOS), based on the new basic understanding developed.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics Letters A","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0375960124006881","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Unlike junctions in solid-state devices, a plasma-metal junction (pm-junction) is a junction of classical and quantum electrons. The plasma electrons are Maxwellian in nature, while metal electrons obey the Fermi-Dirac distribution. In this experiment, the current-voltage characteristics of solid-state devices that form homo or hetero-junction are compared to the pm-junction. Observation shows that the turn-on voltage for pn-junction is 0.5V and decreases to 0.24V for metal-semiconductor junction. However, the pm-junction's turn-on voltage was lowered to a negative value of 7.0V. The devices with negative turn-on voltage are suitable for high-frequency operations. Further, observations show that the current-voltage characteristics of the pm-junction depend on the metal's work function, and the turn-on voltage remains unchanged. This result validates the applicability of the energy-band model for the pm-junction. We present a perspective metal-oxide-plasma (MOP), a gaseous electronic device, as an alternative to metal-oxide-semiconductor (MOS), based on the new basic understanding developed.
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等离子体-金属结:具有负开启电压的结
与固态设备中的结不同,等离子体-金属结(pm-结)是经典电子和量子电子的结。等离子体电子的性质是麦克斯韦电子,而金属电子则服从费米-狄拉克分布。在本实验中,形成同结或异结的固态器件的电流-电压特性与 pm 结进行了比较。观察结果表明,pn 结的开启电压为 0.5V,而金属半导体结的开启电压则降至 0.24V。然而,pm 结的开启电压却降低到了负值 -7.0V。具有负开启电压的器件适用于高频操作。此外,观察结果表明,pm 结的电流-电压特性取决于金属的功函数,而开启电压保持不变。这一结果验证了能带模型对 pm 结的适用性。基于新的基本认识,我们提出了金属-氧化物-等离子体(MOP)这一气态电子器件,作为金属-氧化物-半导体(MOS)的替代品。
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来源期刊
Physics Letters A
Physics Letters A 物理-物理:综合
CiteScore
5.10
自引率
3.80%
发文量
493
审稿时长
30 days
期刊介绍: Physics Letters A offers an exciting publication outlet for novel and frontier physics. It encourages the submission of new research on: condensed matter physics, theoretical physics, nonlinear science, statistical physics, mathematical and computational physics, general and cross-disciplinary physics (including foundations), atomic, molecular and cluster physics, plasma and fluid physics, optical physics, biological physics and nanoscience. No articles on High Energy and Nuclear Physics are published in Physics Letters A. The journal''s high standard and wide dissemination ensures a broad readership amongst the physics community. Rapid publication times and flexible length restrictions give Physics Letters A the edge over other journals in the field.
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