Pub Date : 2024-11-05DOI: 10.1016/j.physleta.2024.130032
A quadrupole oscillator is presented as an integrable model in the Born-Oppenheimer formalism with an electronic Hamiltonian being the quadrupole tensor. The electronic states of present concern are associated with a doubly degenerate positive eigenvalue of the electronic Hamiltonian, and accordingly the nuclear Hamiltonian takes a matrix form. While the potential function for nuclear motion is proportional to , the kinetic energy operator is rather complicated, containing coupling terms with a Berry connection through adiabatic approximation. The energy eigenvalues, which receive a modification by a Chern number, get closer to those for the 3D isotropic harmonic oscillator if the angular momentum quantum number becomes sufficiently large.
{"title":"A quadrupole oscillator as an integrable model","authors":"","doi":"10.1016/j.physleta.2024.130032","DOIUrl":"10.1016/j.physleta.2024.130032","url":null,"abstract":"<div><div>A quadrupole oscillator is presented as an integrable model in the Born-Oppenheimer formalism with an electronic Hamiltonian being the quadrupole tensor. The electronic states of present concern are associated with a doubly degenerate positive eigenvalue of the electronic Hamiltonian, and accordingly the nuclear Hamiltonian takes a <span><math><mn>2</mn><mo>×</mo><mn>2</mn></math></span> matrix form. While the potential function for nuclear motion is proportional to <span><math><msup><mrow><mi>r</mi></mrow><mrow><mn>2</mn></mrow></msup></math></span>, the kinetic energy operator is rather complicated, containing coupling terms with a Berry connection through adiabatic approximation. The energy eigenvalues, which receive a modification by a Chern number, get closer to those for the 3D isotropic harmonic oscillator if the angular momentum quantum number becomes sufficiently large.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142592616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-31DOI: 10.1016/j.physleta.2024.130011
In line with Moore's Law and the International Roadmap for Devices and Systems (IDRS), shrinking MOSFET dimensions to the 3 nm technology node requires the introduction and thorough investigation of new device structures and advanced materials. The current study focuses on the implementation of Triple Metal (TM) and Quadruple Metal (QM) gate work function engineering techniques on both junctionless (JL) and inversion mode (IM) Double surrounding Gate (DSG) In0.53Ga0.47As nanotube (NT) MOSFET. The objective is to analyze the drain current (ID) characteristics for a gate length of 3 nm using Silvaco ATLAS 3D TCAD. In order to make a fair comparison between JL and IM In0.53Ga0.47As NT, the doping concentration of TM and QM JL In0.53Ga0.47As NT is tuned to achieve two specific objectives. Firstly, the goal is to produce the same ION as IM In0.53Ga0.47As NT. Secondly, the aim is to achieve the same threshold voltage (VTH) as IM In0.53Ga0.47As NT. It was discovered that the IOFF for JL devices is approximately 2.93 times smaller compared to IM devices in the TM situation, while considering matching ION and VTH. The JL devices have an IOFF that is 12.9 times smaller and an IOFF that is 102 times smaller compared to the IM device for the QM situation. This is achieved by matching the ION and VTH values. It achieves a lesser drain-induced barrier lowering (DIBL) of approximately 28.10 mV/V, a virtually perfect subthreshold slope (SS) of roughly 60mV/dec, and a larger current ratio of ION/IOFF, which is approximately 1.42 × 107.
根据摩尔定律和国际器件与系统路线图 (IDRS)，要将 MOSFET 尺寸缩小到 3 纳米技术节点，就必须引入并深入研究新的器件结构和先进材料。目前的研究重点是在无结 (JL) 和反转模式 (IM) 双围栅 (DSG) In0.53Ga0.47As 纳米管 (NT) MOSFET 上实施三重金属 (TM) 和四重金属 (QM) 栅工作函数工程技术。目的是使用 Silvaco ATLAS 3D TCAD 分析栅极长度为 3 nm 时的漏极电流 (ID) 特性。为了对 JL 和 IM In0.53Ga0.47As NT 进行公平比较，对 TM 和 QM JL In0.53Ga0.47As NT 的掺杂浓度进行了调整，以实现两个特定目标。首先，目标是产生与 IM In0.53Ga0.47As NT 相同的离子。其次，目标是实现与 IM In0.53Ga0.47As NT 相同的阈值电压 (VTH)。研究发现，在 TM 情况下，考虑到 ION 和 VTH 的匹配，JL 器件的 IOFF 比 IM 器件小约 2.93 倍。与 QM 情况下的 IM 器件相比，JL 器件的 IOFF 小 12.9 倍，IOFF 小 102 倍。这是通过匹配 ION 和 VTH 值实现的。它实现了约 28.10 mV/V 的较小漏极致势垒降低 (DIBL)、约 60mV/dec 的几乎完美的亚阈值斜率 (SS)，以及约 1.42 × 107 的较大电流比 ION/IOFF。
{"title":"Triple and quadruple metal gate work function engineering to improve the performance of junctionless double surrounding gate In0.53Ga0.47As nanotube MOSFET for the upcoming Sub 3 nm technology node","authors":"","doi":"10.1016/j.physleta.2024.130011","DOIUrl":"10.1016/j.physleta.2024.130011","url":null,"abstract":"<div><div>In line with Moore's Law and the International Roadmap for Devices and Systems (IDRS), shrinking MOSFET dimensions to the 3 nm technology node requires the introduction and thorough investigation of new device structures and advanced materials. The current study focuses on the implementation of Triple Metal (TM) and Quadruple Metal (QM) gate work function engineering techniques on both junctionless (JL) and inversion mode (IM) Double surrounding Gate (DSG) In<sub>0.53</sub>Ga<sub>0.47</sub>As nanotube (NT) MOSFET. The objective is to analyze the drain current (I<sub>D</sub>) characteristics for a gate length of 3 nm using Silvaco ATLAS 3D TCAD. In order to make a fair comparison between JL and IM In<sub>0.53</sub>Ga<sub>0.47</sub>As NT, the doping concentration of TM and QM JL In<sub>0.53</sub>Ga<sub>0.47</sub>As NT is tuned to achieve two specific objectives. Firstly, the goal is to produce the same I<sub>ON</sub> as IM In<sub>0.53</sub>Ga<sub>0.47</sub>As NT. Secondly, the aim is to achieve the same threshold voltage (V<sub>TH</sub>) as IM In<sub>0.53</sub>Ga<sub>0.47</sub>As NT. It was discovered that the I<sub>OFF</sub> for JL devices is approximately 2.93 times smaller compared to IM devices in the TM situation, while considering matching I<sub>ON</sub> and V<sub>TH</sub>. The JL devices have an I<sub>OFF</sub> that is 12.9 times smaller and an I<sub>OFF</sub> that is 10<sup>2</sup> times smaller compared to the IM device for the QM situation. This is achieved by matching the I<sub>ON</sub> and V<sub>TH</sub> values. It achieves a lesser drain-induced barrier lowering (DIBL) of approximately 28.10 mV/V, a virtually perfect subthreshold slope (SS) of roughly 60mV/dec, and a larger current ratio of I<sub>ON</sub>/I<sub>OFF</sub>, which is approximately 1.42 × 10<sup>7</sup>.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142593134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-31DOI: 10.1016/j.physleta.2024.130022
Based on the dynamical Gutzwiller mean-field theory, we investigate the ground states of interacting bosons on a triangular ladder lattice, which is comprised of three legs, and in the presence of a staggered magnetic flux. As a consequence, the vortical lattice phase with triangular chiral vortical currents is discovered, which particularly features a biased ladder structure, characterized by larger populations on the inner leg than those of the two outer legs. This similar structure could be either figured out on the four-leg and five-leg flux ladders, interpreted by the Bose-Hubbard model. The variations of currents and populations induced by the growth of number of legs are discussed. We further identify a type of particle current going through a zigzag-shaped outline. It is also necessarily accompanied with the biased configuration on the distribution of population, and could be generalized to the four-leg or five-leg model.
{"title":"Three-leg bosonic triangular ladder in a staggered magnetic field","authors":"","doi":"10.1016/j.physleta.2024.130022","DOIUrl":"10.1016/j.physleta.2024.130022","url":null,"abstract":"<div><div>Based on the dynamical Gutzwiller mean-field theory, we investigate the ground states of interacting bosons on a triangular ladder lattice, which is comprised of three legs, and in the presence of a staggered magnetic flux. As a consequence, the vortical lattice phase with triangular chiral vortical currents is discovered, which particularly features a biased ladder structure, characterized by larger populations on the inner leg than those of the two outer legs. This similar structure could be either figured out on the four-leg and five-leg flux ladders, interpreted by the Bose-Hubbard model. The variations of currents and populations induced by the growth of number of legs are discussed. We further identify a type of particle current going through a zigzag-shaped outline. It is also necessarily accompanied with the biased configuration on the distribution of population, and could be generalized to the four-leg or five-leg model.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142578974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-30DOI: 10.1016/j.physleta.2024.130020
An approximate approach to estimating characteristics of downward-propagating single positive sprite streamers is presented. Within the framework of this approach, the dependences of streamer radius and velocity on the altitude were obtained. The influence of changes in the altitude of streamer initiation and in the electric field at this altitude on the streamer parameters is considered. Estimates of the optical emission rate are obtained.
{"title":"On dynamics of downward-propagating sprite streamers","authors":"","doi":"10.1016/j.physleta.2024.130020","DOIUrl":"10.1016/j.physleta.2024.130020","url":null,"abstract":"<div><div>An approximate approach to estimating characteristics of downward-propagating single positive sprite streamers is presented. Within the framework of this approach, the dependences of streamer radius and velocity on the altitude were obtained. The influence of changes in the altitude of streamer initiation and in the electric field at this altitude on the streamer parameters is considered. Estimates of the optical emission rate are obtained.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142578972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-30DOI: 10.1016/j.physleta.2024.130015
Under the framework of evolutionary games, how to update strategies when individuals interact with multiple neighbors at the same time is a key problem to understand the evolution of cooperation. At present, a widely known method is imitation updating. However, it is undeniable that when resources or capabilities are limited, it is difficult for individuals to obtain more comprehensive information about their counterparts, resulting in imitation method no longer applicable. Reinforcement learning algorithms attract attention because players do not need to know information such as the opponent's payoff, and only adjust strategies based on their own experience and expectations. In view of this, we consider both imitation and reinforcement learning as two behavioral adjustment models, and explore the evolution of cooperative behavior in mixed populations of extrinsic imitators and intrinsic learners. Numerous simulations have shown that when the value of temptation to defect is small, there exists an optimal proportion of intrinsic learners bring group cooperation to its peak. However, in interactive environments with larger social dilemmas, intrinsic learners are effective in resisting betrayal and maintaining group behavior compared to traditional extrinsic imitators. The proposed model reflects the characteristics of seeking advantages, avoiding disadvantages, and imitation in biological groups, and provides new ideas for the design of new game models.
{"title":"Cooperative behavior in multi-agent systems with intrinsic learners and extrinsic imitators","authors":"","doi":"10.1016/j.physleta.2024.130015","DOIUrl":"10.1016/j.physleta.2024.130015","url":null,"abstract":"<div><div>Under the framework of evolutionary games, how to update strategies when individuals interact with multiple neighbors at the same time is a key problem to understand the evolution of cooperation. At present, a widely known method is imitation updating. However, it is undeniable that when resources or capabilities are limited, it is difficult for individuals to obtain more comprehensive information about their counterparts, resulting in imitation method no longer applicable. Reinforcement learning algorithms attract attention because players do not need to know information such as the opponent's payoff, and only adjust strategies based on their own experience and expectations. In view of this, we consider both imitation and reinforcement learning as two behavioral adjustment models, and explore the evolution of cooperative behavior in mixed populations of extrinsic imitators and intrinsic learners. Numerous simulations have shown that when the value of temptation to defect is small, there exists an optimal proportion of intrinsic learners bring group cooperation to its peak. However, in interactive environments with larger social dilemmas, intrinsic learners are effective in resisting betrayal and maintaining group behavior compared to traditional extrinsic imitators. The proposed model reflects the characteristics of seeking advantages, avoiding disadvantages, and imitation in biological groups, and provides new ideas for the design of new game models.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142592617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-30DOI: 10.1016/j.physleta.2024.130017
This paper explores the effectiveness of using ordinal pattern probabilities to evaluate antipersistency in the sign decomposition of long-range anti-correlated Gaussian fluctuations. It is numerically shown that ordinal patterns are able to effectively measure both persistent and antipersistent dynamics by analyzing the sign decomposition derived from fractional Gaussian noise. These findings are crucial given that traditional methods such as Detrended Fluctuation Analysis are unsuccessful in detecting anti-correlations in such sequences. The numerical results are supported by physiological and environmental data, illustrating its applicability in real-world situations.
{"title":"Ordinal language of antipersistent binary walks","authors":"","doi":"10.1016/j.physleta.2024.130017","DOIUrl":"10.1016/j.physleta.2024.130017","url":null,"abstract":"<div><div>This paper explores the effectiveness of using ordinal pattern probabilities to evaluate antipersistency in the sign decomposition of long-range anti-correlated Gaussian fluctuations. It is numerically shown that ordinal patterns are able to effectively measure both persistent and antipersistent dynamics by analyzing the sign decomposition derived from fractional Gaussian noise. These findings are crucial given that traditional methods such as Detrended Fluctuation Analysis are unsuccessful in detecting anti-correlations in such sequences. The numerical results are supported by physiological and environmental data, illustrating its applicability in real-world situations.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142586218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-30DOI: 10.1016/j.physleta.2024.130018
We demonstrate the existence and stability of various multi-hump soliton families within the nonlinear Schrödinger equation with inhomogeneous cubic nonlinearity and fractional diffraction, in the presence of a linear quadratic potential. The profiles, amplitudes, and powers of the three soliton families (the two-, three- and four-hump solitons) are investigated under different parameters, including the Lévy index, propagation constant, and the parameters of the nonuniform cubic nonlinearity. The amplitudes of the two- and three-hump solitons are little sensitive to the variations in the Lévy index, but are highly sensitive to the changes in the propagation constant. Furthermore, we report on two distinct types of four-hump solitons and their propagation under longitudinally modulated nonlinearity. Interestingly, a gradual increase or decrease in the parameter results in the stable regular propagation, while a sudden increase or decrease causes severe distortions and leads to unstable behavior of solitons.
{"title":"Multi-hump solitons under fractional diffraction and inhomogeneous cubic nonlinearity in a quadratic potential","authors":"","doi":"10.1016/j.physleta.2024.130018","DOIUrl":"10.1016/j.physleta.2024.130018","url":null,"abstract":"<div><div>We demonstrate the existence and stability of various multi-hump soliton families within the nonlinear Schrödinger equation with inhomogeneous cubic nonlinearity and fractional diffraction, in the presence of a linear quadratic potential. The profiles, amplitudes, and powers of the three soliton families (the two-, three- and four-hump solitons) are investigated under different parameters, including the Lévy index, propagation constant, and the parameters of the nonuniform cubic nonlinearity. The amplitudes of the two- and three-hump solitons are little sensitive to the variations in the Lévy index, but are highly sensitive to the changes in the propagation constant. Furthermore, we report on two distinct types of four-hump solitons and their propagation under longitudinally modulated nonlinearity. Interestingly, a gradual increase or decrease in the parameter results in the stable regular propagation, while a sudden increase or decrease causes severe distortions and leads to unstable behavior of solitons.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142560540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-30DOI: 10.1016/j.physleta.2024.130019
We derive an exact passage for atom-trimer conversion via the resonance-locked inverse engineering. In particular, the temporal shapes of the fields and the detunings correspond to the exact solution of the system. As a result, the atoms can be perfectly converted into trimers when we choose the suitable parametrization, in which the conversion rate is close to 100%. Compared to the nonlinear stimulated Raman adiabatic passage, the conversion process for exact passage is more robust and faster, which does not be affected by three-body interactions.
{"title":"The stable conversion for atom-homonuclear-trimer via the resonance-locked inverse engineering","authors":"","doi":"10.1016/j.physleta.2024.130019","DOIUrl":"10.1016/j.physleta.2024.130019","url":null,"abstract":"<div><div>We derive an exact passage for atom-trimer conversion via the resonance-locked inverse engineering. In particular, the temporal shapes of the fields and the detunings correspond to the exact solution of the system. As a result, the atoms can be perfectly converted into trimers when we choose the suitable parametrization, in which the conversion rate is close to 100%. Compared to the nonlinear stimulated Raman adiabatic passage, the conversion process for exact passage is more robust and faster, which does not be affected by three-body interactions.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142560541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-30DOI: 10.1016/j.physleta.2024.130021
How far the analogy between massless Dirac fermions in a truly relativistic (1+2)-D spacetime and electrons near the Fermi level in graphene can be seriously taken? A hallmark of relativistic QFT is the multi-photon emission through pair annihilation. In this paper, to address this question we formulate the theoretical basis for a double gate graphene device. In an infinite sheet of pristine graphene the Fermi level is located at the Dirac points, but it can be tunned through gate potentials. This way, electron and hole pockets are induced, forming N and P regions in a large monolayer graphene sheet. The quasi-particles can be accelerated through the source-drain potential to scatter at an intrinsic region, leading to electron-hole annihilation. Feynman amplitudes and emission rates for two-photon emissions arising from electron-hole annihilation in graphene are presented at lowest order, leading to analytical formulae for two photon production, which could experimentally be tested.
真正相对论 (1+2)-D 时空中的无质量狄拉克费米子与石墨烯中费米级附近的电子之间的类比在多大程度上可以被认真对待？相对论 QFT 的一个标志是通过成对湮灭实现多光子发射。在本文中，为了解决这个问题，我们提出了双栅石墨烯器件的理论基础。在原始石墨烯的无限薄片中，费米级位于狄拉克点，但可以通过栅极电位进行调整。这样，电子和空穴就会被诱导出来，在大型单层石墨烯片中形成 N 区和 P 区。准粒子可以通过源-漏电势加速，在本征区域散射，导致电子-空穴湮灭。研究提出了石墨烯中电子-空穴湮灭产生的双光子发射的最低阶费曼振幅和发射率，从而得出了双光子产生的分析公式，并可对其进行实验测试。
{"title":"Tunable two-photon THz emissions through pair annihilation in graphene with a double gate structure","authors":"","doi":"10.1016/j.physleta.2024.130021","DOIUrl":"10.1016/j.physleta.2024.130021","url":null,"abstract":"<div><div>How far the analogy between massless Dirac fermions in a truly relativistic (1+2)-D spacetime and electrons near the Fermi level in graphene can be seriously taken? A hallmark of relativistic QFT is the multi-photon emission through pair annihilation. In this paper, to address this question we formulate the theoretical basis for a double gate graphene device. In an infinite sheet of pristine graphene the Fermi level is located at the Dirac points, but it can be tunned through gate potentials. This way, electron and hole pockets are induced, forming N and P regions in a large monolayer graphene sheet. The quasi-particles can be accelerated through the source-drain potential to scatter at an intrinsic region, leading to electron-hole annihilation. Feynman amplitudes and emission rates for two-photon emissions arising from electron-hole annihilation in graphene are presented at lowest order, leading to analytical formulae for two photon production, which could experimentally be tested.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142592618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-30DOI: 10.1016/j.physleta.2024.129994
Unlike junctions in solid-state devices, a plasma-metal junction (pm-junction) is a junction of classical and quantum electrons. The plasma electrons are Maxwellian in nature, while metal electrons obey the Fermi-Dirac distribution. In this experiment, the current-voltage characteristics of solid-state devices that form homo or hetero-junction are compared to the pm-junction. Observation shows that the turn-on voltage for pn-junction is 0.5V and decreases to 0.24V for metal-semiconductor junction. However, the pm-junction's turn-on voltage was lowered to a negative value of . The devices with negative turn-on voltage are suitable for high-frequency operations. Further, observations show that the current-voltage characteristics of the pm-junction depend on the metal's work function, and the turn-on voltage remains unchanged. This result validates the applicability of the energy-band model for the pm-junction. We present a perspective metal-oxide-plasma (MOP), a gaseous electronic device, as an alternative to metal-oxide-semiconductor (MOS), based on the new basic understanding developed.
{"title":"Plasma-metal junction: A junction with negative turn-on voltage","authors":"","doi":"10.1016/j.physleta.2024.129994","DOIUrl":"10.1016/j.physleta.2024.129994","url":null,"abstract":"<div><div>Unlike junctions in solid-state devices, a plasma-metal junction (pm-junction) is a junction of classical and quantum electrons. The plasma electrons are Maxwellian in nature, while metal electrons obey the Fermi-Dirac distribution. In this experiment, the current-voltage characteristics of solid-state devices that form homo or hetero-junction are compared to the pm-junction. Observation shows that the turn-on voltage for pn-junction is 0.5<em>V</em> and decreases to 0.24<em>V</em> for metal-semiconductor junction. However, the pm-junction's turn-on voltage was lowered to a negative value of <span><math><mo>−</mo><mn>7.0</mn><mi>V</mi></math></span>. The devices with negative turn-on voltage are suitable for high-frequency operations. Further, observations show that the current-voltage characteristics of the pm-junction depend on the metal's work function, and the turn-on voltage remains unchanged. This result validates the applicability of the energy-band model for the pm-junction. We present a perspective metal-oxide-plasma (MOP), a gaseous electronic device, as an alternative to metal-oxide-semiconductor (MOS), based on the new basic understanding developed.</div></div>","PeriodicalId":20172,"journal":{"name":"Physics Letters A","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142561164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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