Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors

IF 12.3 1区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC npj Flexible Electronics Pub Date : 2024-11-02 DOI:10.1038/s41528-024-00362-8
Bongho Jang, Junil Kim, Jieun Lee, Geuntae Park, Gyuwon Yang, Jaewon Jang, Hyuk-Jun Kwon
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Abstract

We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2 semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel processes. This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating. The combustion ZrO2 films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network, which contributes to the low leakage current and frequency-independent dielectric properties. The ZrO2/SnO2 TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics, including a field-effect mobility of 26.16 cm2/Vs, a subthreshold swing of 0.125 V/dec, and an on/off current ratio of 1.13 × 106 at a low operating voltage of 3 V. Furthermore, we demonstrated flexible ZrO2/SnO2 TFTs with robust mechanical stability, capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm, achieved by scaling down the device dimensions.

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用于高性能柔性薄膜晶体管的燃烧辅助低温 ZrO2/SnO2 薄膜
我们利用二氧化硫(SnO2)半导体和高k ZrO2电介质开发出了高性能柔性氧化物薄膜晶体管(TFT),这两种物质都是通过燃烧辅助溶胶-凝胶工艺形成的。这种方法涉及燃料和氧化剂的放热反应,无需大量外部加热即可生成高质量的氧化物薄膜。燃烧 ZrO2 薄膜具有无定形结构,氧化物网络中氧的比例较高,这有助于实现低漏电流和与频率无关的介电性能。利用燃烧合成法在柔性衬底上制造的 ZrO2/SnO2 TFT 具有出色的电气特性,包括 26.16 cm2/Vs 的场效应迁移率、0.125 V/dec 的阈下摆动和 3 V 低工作电压下 1.13 × 106 的开/关电流比。此外,我们还展示了具有强大机械稳定性的柔性 ZrO2/SnO2 TFT,它能在弯曲半径为 2.5 mm 的条件下经受住 5000 次弯曲测试,这是通过缩小器件尺寸实现的。
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来源期刊
CiteScore
17.10
自引率
4.80%
发文量
91
审稿时长
6 weeks
期刊介绍: npj Flexible Electronics is an online-only and open access journal, which publishes high-quality papers related to flexible electronic systems, including plastic electronics and emerging materials, new device design and fabrication technologies, and applications.
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