Pub Date : 2024-11-20DOI: 10.1038/s41528-024-00369-1
Sajjan Parajuli, Younsu Jung, Sagar Shrestha, Jinhwa Park, Chanyeop Ahn, Kiran Shrestha, Bijendra Bishow Maskey, Tae-Yeon Cho, Ji-Ho Eom, Changwoo Lee, Jeong-Taek Kong, Byung-Sung Kim, Taik-Min Lee, SoYoung Kim, Gyoujin Cho
Despite the roll-to-roll (R2R) gravure printing method emerging as an alternative sustainable technology for fabricating logic circuits based on p- and n-types of single-walled carbon nanotube thin film transistors (p,n-SWCNT-TFTs), the wide variation of large threshold voltage (Vth > ~8) in the R2R printed p,n-SWCNT-TFTs prevents the integration of complementary logic circuit. Here, the Vth variation of the p,n-SWCNT-TFTs was narrowed down by developing a method of using the first gravure roll with the minimized superposition error (< ±40 µm) of engraved registration marks and implementing the R2R doping process for tailoring the Vth using polymer-based p- and n-doping inks. Through those two methods, the R2R printed the p,n-SWCNT-TFTs was tailored to shift Vth to near ±2.7 V and reduce Vth variation to ±1.6 V while the noise margin was improved by 24% so that a large number of R2R printed logic gates could be integrated with clear logic levels at ±10 V of operation voltage. Based on the tailored p,n-SWCNT-TFTs, a fully R2R printed 4-bit arithmetic and logic unit was successfully demonstrated by integrating 156 p,n-SWCNT-TFTs.
尽管卷对卷(R2R)凹版印刷方法已成为基于 p 型和 n 型单壁碳纳米管薄膜晶体管(p,n-SWCNT-TFTs)制造逻辑电路的另一种可持续技术,但 R2R 印刷的 p,n-SWCNT-TFTs 的阈值电压(Vth > ~8)变化很大,阻碍了互补逻辑电路的集成。在此,我们开发了一种方法,即使用雕刻套准标记的叠加误差最小(< ±40 µm)的第一凹版辊,并使用聚合物基 p 和 n 掺杂油墨实施 R2R 掺杂工艺以定制 Vth,从而缩小了 p、n-SWCNT-TFT 的 Vth 变化。通过这两种方法,印刷在 p、n-SWCNT-TFT 上的 R2R 被定制为将 Vth 值移至接近 ±2.7 V,并将 Vth 值变化降低到 ±1.6 V,同时将噪声裕度提高了 24%,这样就可以集成大量 R2R 印刷逻辑门,并在 ±10 V 工作电压下具有清晰的逻辑电平。基于定制的 p、n-SWCNT-TFT,通过集成 156 个 p、n-SWCNT-TFT,成功演示了完全 R2R 印刷的 4 位算术和逻辑单元。
{"title":"Tailoring threshold voltage of R2R printed SWCNT thin film transistors for realizing 4 bit ALU","authors":"Sajjan Parajuli, Younsu Jung, Sagar Shrestha, Jinhwa Park, Chanyeop Ahn, Kiran Shrestha, Bijendra Bishow Maskey, Tae-Yeon Cho, Ji-Ho Eom, Changwoo Lee, Jeong-Taek Kong, Byung-Sung Kim, Taik-Min Lee, SoYoung Kim, Gyoujin Cho","doi":"10.1038/s41528-024-00369-1","DOIUrl":"https://doi.org/10.1038/s41528-024-00369-1","url":null,"abstract":"<p>Despite the roll-to-roll (R2R) gravure printing method emerging as an alternative sustainable technology for fabricating logic circuits based on <i>p-</i> and <i>n-</i>types of single-walled carbon nanotube thin film transistors (<i>p,n-</i>SWCNT-TFTs), the wide variation of large threshold voltage (<i>V</i><sub>th</sub> > ~8) in the R2R printed <i>p,n-</i>SWCNT-TFTs prevents the integration of complementary logic circuit. Here, the <i>V</i><sub>th</sub> variation of the <i>p,n-</i>SWCNT-TFTs was narrowed down by developing a method of using the first gravure roll with the minimized superposition error (< ±40 µm) of engraved registration marks and implementing the R2R doping process for tailoring the <i>V</i><sub>th</sub> using polymer-based <i>p-</i> and <i>n-</i>doping inks. Through those two methods, the R2R printed the <i>p,n-</i>SWCNT-TFTs was tailored to shift <i>V</i><sub>th</sub> to near ±2.7 V and reduce <i>V</i><sub>th</sub> variation to ±1.6 V while the noise margin was improved by 24% so that a large number of R2R printed logic gates could be integrated with clear logic levels at ±10 V of operation voltage. Based on the tailored <i>p,n-</i>SWCNT-TFTs, a fully R2R printed 4-bit arithmetic and logic unit was successfully demonstrated by integrating 156 <i>p,n-</i>SWCNT-TFTs.</p>","PeriodicalId":48528,"journal":{"name":"npj Flexible Electronics","volume":"99 1","pages":""},"PeriodicalIF":14.6,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142678320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-14DOI: 10.1038/s41528-024-00364-6
Myunghwan Song, Junyoung Moon, Hyungseok Yong, Hyeonhui Song, Juneil Park, Jiwoong Hur, Dongchang Kim, Kyungtae Park, Sungwon Jung, Gyeongmo Kim, Sangeui Lee, Deokjae Heo, Kyunghwan Cha, Patrick T. J. Hwang, Jinkee Hong, Giuk Lee, Sangmin Lee
Electrical stimulation is effective for various therapeutic applications; however, to increase convenience, it is crucial to eliminate generators and batteries for wireless power transmission. This paper presents a full textile-based body-coupled electrical stimulation (BCES) system designed for wireless electrical stimulation using energy loss from electronic devices and static electricity from physical activity. We developed the BCES socks by knitting conductive threads to ensure stability and comfort. BCES socks generate electric fields ranging from tens to hundreds of millivolts per millimeter, which are sufficient to activate muscle fibers. Experimental and computational analyses confirmed the effective concentration of the electric fields. Human trials demonstrated significant improvements in exercise performance, with a 21.47% increase in calf raise frequency, an 11.97% increase in repetition count, and a 6.25% reduction in muscle fatigue. These results indicate the potential of BCES socks as a practical battery-free solution for enhancing muscle activity and reducing fatigue.
{"title":"Full textile-based body-coupled electrical stimulation for wireless, battery-free, and wearable bioelectronics","authors":"Myunghwan Song, Junyoung Moon, Hyungseok Yong, Hyeonhui Song, Juneil Park, Jiwoong Hur, Dongchang Kim, Kyungtae Park, Sungwon Jung, Gyeongmo Kim, Sangeui Lee, Deokjae Heo, Kyunghwan Cha, Patrick T. J. Hwang, Jinkee Hong, Giuk Lee, Sangmin Lee","doi":"10.1038/s41528-024-00364-6","DOIUrl":"10.1038/s41528-024-00364-6","url":null,"abstract":"Electrical stimulation is effective for various therapeutic applications; however, to increase convenience, it is crucial to eliminate generators and batteries for wireless power transmission. This paper presents a full textile-based body-coupled electrical stimulation (BCES) system designed for wireless electrical stimulation using energy loss from electronic devices and static electricity from physical activity. We developed the BCES socks by knitting conductive threads to ensure stability and comfort. BCES socks generate electric fields ranging from tens to hundreds of millivolts per millimeter, which are sufficient to activate muscle fibers. Experimental and computational analyses confirmed the effective concentration of the electric fields. Human trials demonstrated significant improvements in exercise performance, with a 21.47% increase in calf raise frequency, an 11.97% increase in repetition count, and a 6.25% reduction in muscle fatigue. These results indicate the potential of BCES socks as a practical battery-free solution for enhancing muscle activity and reducing fatigue.","PeriodicalId":48528,"journal":{"name":"npj Flexible Electronics","volume":" ","pages":"1-9"},"PeriodicalIF":12.3,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41528-024-00364-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142637089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-08DOI: 10.1038/s41528-024-00363-7
Sangjun Kim, Jonathan Wells, Sarnab Bhattacharya, Hamsi Nathan, Jiaming He, Isabella Tubilla, Heeyong Huh, Pooja Kakani, Ali Farshkaran, Praveenkum Pasupathy, Jianshi Zhou, Emily Porter, Nathan Lazarus, Nanshu Lu
A wearable microgrid that centralizes and distributes harvested energy across different body regions can optimize power utilization and reduce overall battery weight. This setup underscores the importance of developing cable-free wireless power transfer (WPT) systems for mobile and portable devices to eliminate the risks posed by wired connections, especially in dynamic and hazardous environments. We introduce a thin, stretchable, and safe hand band capable of watt-level wireless charging through the widely adopted Qi protocol operating at 130 kHz. The implementation of non-adhesive fabric encapsulation serves to protect the 50-μm-thin spiral copper antenna from mechanical strain, ensuring an overall hand band stretchability of 50%. We also create a stretchable “Ferrofabric”, characterized by a magnetic permeability of 11.3 and a tensile modulus of 75.3 kPa, that provides magnetic shielding for the antenna without compromising wearability. The “Ferrofabric” improves the coil inductance but induces core loss in AC application. By fully understanding and managing loss mechanisms such as the skin effect, proximity effect, core loss, and joule heating, we achieve a wireless charging efficiency of 71% and power delivery of 3.81 W in the kHz frequency range. Our WPT hand band is unobstructive to hand motion and can charge a handheld smartphone as fast as a desktop charger or power a battery-free chest-laminated e-tattoo sensor, with well-managed thermal and electromagnetic safety. Through a holistic electromagnetic, structural, and thermal design, our device culminates in a safe, rugged, and versatile solution for wearable WPT systems.
{"title":"Unobstructive and safe-to-wear watt-level wireless charger","authors":"Sangjun Kim, Jonathan Wells, Sarnab Bhattacharya, Hamsi Nathan, Jiaming He, Isabella Tubilla, Heeyong Huh, Pooja Kakani, Ali Farshkaran, Praveenkum Pasupathy, Jianshi Zhou, Emily Porter, Nathan Lazarus, Nanshu Lu","doi":"10.1038/s41528-024-00363-7","DOIUrl":"10.1038/s41528-024-00363-7","url":null,"abstract":"A wearable microgrid that centralizes and distributes harvested energy across different body regions can optimize power utilization and reduce overall battery weight. This setup underscores the importance of developing cable-free wireless power transfer (WPT) systems for mobile and portable devices to eliminate the risks posed by wired connections, especially in dynamic and hazardous environments. We introduce a thin, stretchable, and safe hand band capable of watt-level wireless charging through the widely adopted Qi protocol operating at 130 kHz. The implementation of non-adhesive fabric encapsulation serves to protect the 50-μm-thin spiral copper antenna from mechanical strain, ensuring an overall hand band stretchability of 50%. We also create a stretchable “Ferrofabric”, characterized by a magnetic permeability of 11.3 and a tensile modulus of 75.3 kPa, that provides magnetic shielding for the antenna without compromising wearability. The “Ferrofabric” improves the coil inductance but induces core loss in AC application. By fully understanding and managing loss mechanisms such as the skin effect, proximity effect, core loss, and joule heating, we achieve a wireless charging efficiency of 71% and power delivery of 3.81 W in the kHz frequency range. Our WPT hand band is unobstructive to hand motion and can charge a handheld smartphone as fast as a desktop charger or power a battery-free chest-laminated e-tattoo sensor, with well-managed thermal and electromagnetic safety. Through a holistic electromagnetic, structural, and thermal design, our device culminates in a safe, rugged, and versatile solution for wearable WPT systems.","PeriodicalId":48528,"journal":{"name":"npj Flexible Electronics","volume":" ","pages":"1-15"},"PeriodicalIF":12.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41528-024-00363-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142597367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-02DOI: 10.1038/s41528-024-00362-8
Bongho Jang, Junil Kim, Jieun Lee, Geuntae Park, Gyuwon Yang, Jaewon Jang, Hyuk-Jun Kwon
We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2 semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel processes. This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating. The combustion ZrO2 films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network, which contributes to the low leakage current and frequency-independent dielectric properties. The ZrO2/SnO2 TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics, including a field-effect mobility of 26.16 cm2/Vs, a subthreshold swing of 0.125 V/dec, and an on/off current ratio of 1.13 × 106 at a low operating voltage of 3 V. Furthermore, we demonstrated flexible ZrO2/SnO2 TFTs with robust mechanical stability, capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm, achieved by scaling down the device dimensions.
{"title":"Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors","authors":"Bongho Jang, Junil Kim, Jieun Lee, Geuntae Park, Gyuwon Yang, Jaewon Jang, Hyuk-Jun Kwon","doi":"10.1038/s41528-024-00362-8","DOIUrl":"10.1038/s41528-024-00362-8","url":null,"abstract":"We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2 semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel processes. This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating. The combustion ZrO2 films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network, which contributes to the low leakage current and frequency-independent dielectric properties. The ZrO2/SnO2 TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics, including a field-effect mobility of 26.16 cm2/Vs, a subthreshold swing of 0.125 V/dec, and an on/off current ratio of 1.13 × 106 at a low operating voltage of 3 V. Furthermore, we demonstrated flexible ZrO2/SnO2 TFTs with robust mechanical stability, capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm, achieved by scaling down the device dimensions.","PeriodicalId":48528,"journal":{"name":"npj Flexible Electronics","volume":" ","pages":"1-11"},"PeriodicalIF":12.3,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41528-024-00362-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142563144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-30DOI: 10.1038/s41528-024-00361-9
Junwoo Lee, Chang-Yeon Gu, Jaehyeock Chang, Eun Hae Cho, Taek-Soo Kim, Kyung Cheol Choi
In the IoT era, the demand for wearable displays is rapidly growing, catalyzing the advancement of research into textile-based organic light-emitting diodes (OLEDs). This growing interest stems particularly from the inherent flexibility of textile-based OLEDs1,2, allowing for seamless integration into the dynamic and interactive functionalities of cutting-edge wearable technology, alongside their superior electrical performance. The durability and mechanical robustness of these displays, especially under physical stress and deformation, are critical to their practical application and longevity. Thus, understanding and enhancing the mechanical properties of textile-based OLEDs is paramount for their successful integration into wearable technologies. However, many studies assessing the mechanical properties of OLEDs have predominantly relied on simplistic bending test outcomes determined by the radius, often neglecting or insufficiently analyzing the strain exerted on the OLEDs atop textile substrates in relation to curvature of these devices. Existing analyses typically presume pure bending, though such an assumption leads to considerable errors in strain estimations, making such approaches problematic if the goal is practical application in actual wearable display products. To address these limitations, an analytic model that includes a comprehensive energy equation is introduced, considering the stretching energy, bending energy, and shear energy of each layer composing the textile substrate. This holistic approach provides a novel formula specifically designed to calculate the top surface strain of textile substrates. Robust validation of this formula is conducted by comparing its results with strain measurements obtained from digital image correlation (DIC) and finite element analysis (FEA) outcomes from ANSYS across various bending radii (or equivalently, curvatures). The close alignment of the calculated strain values with those derived from DIC and FEA not only underscores the precision of this formula but also highlights its significant potential for enhancing the designs and functionalities of future wearable display technologies under real-world conditions.
{"title":"Analytic modeling and validation of strain in textile-based OLEDs for advanced textile display technologies","authors":"Junwoo Lee, Chang-Yeon Gu, Jaehyeock Chang, Eun Hae Cho, Taek-Soo Kim, Kyung Cheol Choi","doi":"10.1038/s41528-024-00361-9","DOIUrl":"10.1038/s41528-024-00361-9","url":null,"abstract":"In the IoT era, the demand for wearable displays is rapidly growing, catalyzing the advancement of research into textile-based organic light-emitting diodes (OLEDs). This growing interest stems particularly from the inherent flexibility of textile-based OLEDs1,2, allowing for seamless integration into the dynamic and interactive functionalities of cutting-edge wearable technology, alongside their superior electrical performance. The durability and mechanical robustness of these displays, especially under physical stress and deformation, are critical to their practical application and longevity. Thus, understanding and enhancing the mechanical properties of textile-based OLEDs is paramount for their successful integration into wearable technologies. However, many studies assessing the mechanical properties of OLEDs have predominantly relied on simplistic bending test outcomes determined by the radius, often neglecting or insufficiently analyzing the strain exerted on the OLEDs atop textile substrates in relation to curvature of these devices. Existing analyses typically presume pure bending, though such an assumption leads to considerable errors in strain estimations, making such approaches problematic if the goal is practical application in actual wearable display products. To address these limitations, an analytic model that includes a comprehensive energy equation is introduced, considering the stretching energy, bending energy, and shear energy of each layer composing the textile substrate. This holistic approach provides a novel formula specifically designed to calculate the top surface strain of textile substrates. Robust validation of this formula is conducted by comparing its results with strain measurements obtained from digital image correlation (DIC) and finite element analysis (FEA) outcomes from ANSYS across various bending radii (or equivalently, curvatures). The close alignment of the calculated strain values with those derived from DIC and FEA not only underscores the precision of this formula but also highlights its significant potential for enhancing the designs and functionalities of future wearable display technologies under real-world conditions.","PeriodicalId":48528,"journal":{"name":"npj Flexible Electronics","volume":" ","pages":"1-14"},"PeriodicalIF":12.3,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41528-024-00361-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142541587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-29DOI: 10.1038/s41528-024-00360-w
Se-Hun Kang, Ju-Yong Lee, Joo-Hyeon Park, Sung-Geun Choi, Sang-Ho Oh, Young-Chang Joo, Seung-Kyun Kang
Flexible and biodegradable electronics have emerged as a promising solution for escalating electronic waste issue caused by the rapid development of skin patch electronics. Fully biodegradable displays are essential for visualizing biological/physical/chemical/electrochemical signals measured by a wide range of skin patch electronics. Here we propose fully biodegradable electrochromic display providing low operating voltage and low power consumption. The biodegradable transparent conductive electrode was fabricated by transferring free-standing tungsten nanomesh onto poly lactic-co-glycolic acid substrate using electrospinning templating, minimizing damage to the substrate. Electrochromic layer was tungsten oxide which is biodegradable, and a ferrocyanide/ferricyanide redox agent was utilized as a counter electrode reaction to enhance operational stability in an aqueous electrolyte by reducing operating voltage and side reactions. This display successfully visualized diverse signals from various biodegradable electronics such as UV sensors and electrochemical transistors, and finally underwent eco-friendly degradation in phosphate-buffered saline or soil under mild conditions.
{"title":"Fully biodegradable electrochromic display for disposable patch","authors":"Se-Hun Kang, Ju-Yong Lee, Joo-Hyeon Park, Sung-Geun Choi, Sang-Ho Oh, Young-Chang Joo, Seung-Kyun Kang","doi":"10.1038/s41528-024-00360-w","DOIUrl":"10.1038/s41528-024-00360-w","url":null,"abstract":"Flexible and biodegradable electronics have emerged as a promising solution for escalating electronic waste issue caused by the rapid development of skin patch electronics. Fully biodegradable displays are essential for visualizing biological/physical/chemical/electrochemical signals measured by a wide range of skin patch electronics. Here we propose fully biodegradable electrochromic display providing low operating voltage and low power consumption. The biodegradable transparent conductive electrode was fabricated by transferring free-standing tungsten nanomesh onto poly lactic-co-glycolic acid substrate using electrospinning templating, minimizing damage to the substrate. Electrochromic layer was tungsten oxide which is biodegradable, and a ferrocyanide/ferricyanide redox agent was utilized as a counter electrode reaction to enhance operational stability in an aqueous electrolyte by reducing operating voltage and side reactions. This display successfully visualized diverse signals from various biodegradable electronics such as UV sensors and electrochemical transistors, and finally underwent eco-friendly degradation in phosphate-buffered saline or soil under mild conditions.","PeriodicalId":48528,"journal":{"name":"npj Flexible Electronics","volume":" ","pages":"1-11"},"PeriodicalIF":12.3,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41528-024-00360-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142536909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-24DOI: 10.1038/s41528-024-00359-3
Sangsik Park, Seung Hyun Kim, Hansol Lee, Kilwon Cho
Despite recent dramatic improvements in the electronic characteristics of stretchable organic field-effect transistors (FETs), their low operational stability remains a bottleneck for their use in practical applications. Here, the operational stability, especially the bias-stress stability, of semiconducting polymer-based FETs under various tensile strains is investigated. Analyses on the structure of stretched semiconducting polymer films and spectroscopic quantification of trapped charges within them reveal the major cause of the strain-dependent bias-stress instability of the FETs. Devices with larger strains exhibit lower stability than those with smaller strains because of the increased water content, which is accompanied by the formation of cracks and nanoscale cavities in the semiconducting polymer film as results of the applied strain. The strain-dependence of bias-stress stability of stretchable OFETs can be eliminated by passivating the devices to avoid penetration of water molecules. This work provides new insights for the development of bias-stable stretchable OFETs.
{"title":"Strain-dependent charge trapping and its impact on the operational stability of polymer field-effect transistors","authors":"Sangsik Park, Seung Hyun Kim, Hansol Lee, Kilwon Cho","doi":"10.1038/s41528-024-00359-3","DOIUrl":"10.1038/s41528-024-00359-3","url":null,"abstract":"Despite recent dramatic improvements in the electronic characteristics of stretchable organic field-effect transistors (FETs), their low operational stability remains a bottleneck for their use in practical applications. Here, the operational stability, especially the bias-stress stability, of semiconducting polymer-based FETs under various tensile strains is investigated. Analyses on the structure of stretched semiconducting polymer films and spectroscopic quantification of trapped charges within them reveal the major cause of the strain-dependent bias-stress instability of the FETs. Devices with larger strains exhibit lower stability than those with smaller strains because of the increased water content, which is accompanied by the formation of cracks and nanoscale cavities in the semiconducting polymer film as results of the applied strain. The strain-dependence of bias-stress stability of stretchable OFETs can be eliminated by passivating the devices to avoid penetration of water molecules. This work provides new insights for the development of bias-stable stretchable OFETs.","PeriodicalId":48528,"journal":{"name":"npj Flexible Electronics","volume":" ","pages":"1-12"},"PeriodicalIF":12.3,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41528-024-00359-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142488641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-22DOI: 10.1038/s41528-024-00356-6
Jianyong Pan, Hao Kan, Zhaorui Liu, Song Gao, Enxiu Wu, Yang Li, Chunwei Zhang
Tungsten oxide (WO3)-based memristors show promising applications in neuromorphic computing. However, single-layer WO3 memristors suffer from issues such as weak memory performance and nonlinear conductance variations. In this work, a functional layer based on the hybrids of WO3−x and TiO2 is proposed for constructing flexible memristors featuring outstanding synaptic characteristics. Applying diverse electrical stimulations to the memristor enables a range of synaptic functions, elucidating its conduction mechanism through the conductive filament model. The incorporation of TiO2 not only enhances the memristor’s memory characteristics but makes its conductance more linear, symmetrical and uniform during the long-term changes. Furthermore, in view of the enhanced device performance by TiO2 doping, the potential of this device for simple behavioral simulation and processing of complex computing problems is explored. The “learning-forgetting-relearning” characteristics and device integrability are visually demonstrated. Applying the device to a convolutional neural network, the recognition accuracy of MNIST handwritten digits reaches 98.7%.
{"title":"Flexible TiO2-WO3−x hybrid memristor with enhanced linearity and synaptic plasticity for precise weight tuning in neuromorphic computing","authors":"Jianyong Pan, Hao Kan, Zhaorui Liu, Song Gao, Enxiu Wu, Yang Li, Chunwei Zhang","doi":"10.1038/s41528-024-00356-6","DOIUrl":"10.1038/s41528-024-00356-6","url":null,"abstract":"Tungsten oxide (WO3)-based memristors show promising applications in neuromorphic computing. However, single-layer WO3 memristors suffer from issues such as weak memory performance and nonlinear conductance variations. In this work, a functional layer based on the hybrids of WO3−x and TiO2 is proposed for constructing flexible memristors featuring outstanding synaptic characteristics. Applying diverse electrical stimulations to the memristor enables a range of synaptic functions, elucidating its conduction mechanism through the conductive filament model. The incorporation of TiO2 not only enhances the memristor’s memory characteristics but makes its conductance more linear, symmetrical and uniform during the long-term changes. Furthermore, in view of the enhanced device performance by TiO2 doping, the potential of this device for simple behavioral simulation and processing of complex computing problems is explored. The “learning-forgetting-relearning” characteristics and device integrability are visually demonstrated. Applying the device to a convolutional neural network, the recognition accuracy of MNIST handwritten digits reaches 98.7%.","PeriodicalId":48528,"journal":{"name":"npj Flexible Electronics","volume":" ","pages":"1-12"},"PeriodicalIF":12.3,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41528-024-00356-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-21DOI: 10.1038/s41528-024-00355-7
Hee Kyu Lee, Sang Uk Park, Sunga Kong, Heyin Ryu, Hyun Bin Kim, Sang Hoon Lee, Danbee Kang, Sun Hye Shin, Ki Jun Yu, Juhee Cho, Joohoon Kang, Il Yong Chun, Hye Yun Park, Sang Min Won
Epidermally mounted sensors using triaxial accelerometers have been previously used to monitor physiological processes with the implementation of machine learning (ML) algorithm interfaces. The findings from these previous studies have established a strong foundation for the analysis of high-resolution, intricate signals, typically through frequency domain conversion. In this study we integrate a wireless mechano-acoustic sensor with a multi-modal deep learning system for the real-time analysis of signals emitted by the laryngeal prominence area of the thyroid cartilage at frequency ranges up to 1 kHz. This interface provides real-time data visualization and communication with the ML server, creating a system that assesses severity of chronic obstructive pulmonary disease and analyzes the user’s speech patterns.
使用三轴加速度计的表皮安装传感器以前曾被用于监测生理过程,并实施了机器学习(ML)算法接口。这些研究结果为分析高分辨率的复杂信号奠定了坚实的基础,通常是通过频域转换。在这项研究中,我们将无线机械声学传感器与多模态深度学习系统集成在一起,用于实时分析甲状软骨喉突出部位发出的频率范围高达 1 kHz 的信号。该接口可提供实时数据可视化并与 ML 服务器进行通信,从而创建一个可评估慢性阻塞性肺病严重程度并分析用户说话模式的系统。
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