First-principles investigation on the optoelectronic characteristics of multilayer borophene

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2024-11-03 DOI:10.1007/s11082-024-07770-0
Yuxuan Wang, Jiamei Liu, Fushi Jiang, Kunpeng Zhou, Weihua Wang
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Abstract

In this research, and photoelectric properties of two possible allotropes β12-borophene and δ6-borophene have been investigated using first-principles calculations for 1–4 borophene layers. The band structures, charge density, partial density of states, electrostatic potential and absorption spectra are calculated for multilayer borophene. The obtained results indicate that all layers exhibit anisotropic metallic behavior due to the interlayer charge transfer in β12-borophene and δ6-borophene. Furthermore, band splitting was increased with layer number, which was more pronounced in β12-borophene. This finding was verified by the partial density of states. Moreover, the anisotropic structure of β12-borophene and δ6-borophene is evident in the calculated absorbance, which, while relatively low, distinctly exhibits a dependence on the number of layers. Meanwhile, multilayer borophene was almost transparent in visible region with weak absorption, which reflected its anisotropic structure. Density functional theory results suggested that multilayer borophene provided a critical basis for future research on photonic technology. These findings highlighted the substantial potential of multilayer borophene for photonic technology.

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多层硼吩光电特性的第一性原理研究
本研究采用第一原理计算方法,研究了 1-4 层硼吩的两种可能同素异形体 β12 硼吩和 δ6 硼吩的光电特性。计算了多层硼吩的能带结构、电荷密度、部分态密度、静电势和吸收光谱。结果表明,由于β12-硼吩和δ6-硼吩中的层间电荷转移,所有层都表现出各向异性的金属行为。此外,带分裂随着层数的增加而增加,这在β12-硼吩中更为明显。这一发现通过部分态密度得到了验证。此外,β12-硼吩和δ6-硼吩的各向异性结构在计算吸光度上也很明显,虽然吸光度相对较低,但却明显表现出与层数有关。同时,多层硼吩在可见光区域几乎是透明的,吸收较弱,这反映了其各向异性结构。密度泛函理论结果表明,多层硼吩为未来的光子技术研究提供了重要依据。这些发现凸显了多层硼吩在光子技术方面的巨大潜力。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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