Tungsten interior doping engineering induced sulfur vacancies of MoS2 for efficient charge transfer and nonlinear optical performance: Implications for optical limiting devices

Abstract

Modulating the photoelectric properties of molybdenum disulfide (MoS₂) through defect engineering and heterometal doping is crucial for its potential applications in electronic and optoelectronic devices. Herein, a comprehensive overview is provided on the advancements of two-dimensional materials with a ternary structure comprising sulfur (S), molybdenum (Mo), and tungsten (W) in the field of optoelectronic device. A ternary W-P/MoS₂ (P: direct current target power) nanomaterial was designed and synthesized using W interior doping engineering induced S vacancies. The experimental results reveal that the introduction of W metal causes lattice distortion in MoS₂, leading to the formation of S vacancies within W-P/MoS₂. Compared to pure MoS₂, W-P/MoS₂ with S vacancies demonstrates enhanced reverse saturable absorption and optical limiting. Density functional theory calculations suggest that the S vacancies introduced by W doping in MoS₂ introduce defect energy levels, which are believed to be the reason for the improved nonlinear optical (NLO) performance of W-P/MoS₂. Furthermore, transient absorption spectroscopy reveals the photophysical model of carrier relaxation and presents an explanation for the optimized NLO properties of W-P/MoS₂. This work provides a novel strategy for the design and synthesis of ternary transition metal dichalcogenides and modulating the NLO properties by doping transition metal-mediated vacancies.