High Performance Solar-Blind UV Detectors Based on N-Type Wide Bandgap Organic Materials

Abstract

A strategy based on N-type organic wide-bandgap materials to form heterojunctions enhances carrier separation and achieves high-performance UV detection. This approach addresses issues such as low UV detection performance and insufficient depth of detection wavelengths. In our study, we combined two N-type semiconductor materials with a p-type small molecule to form a heterojunction serving as the photosensitive layer. This configuration successfully achieved a high-performance solar-blind ultraviolet (SBUV) detector, exhibiting a maximum responsivity (R) of 227 A/W, an EQE of 1.1 × 10⁵%, and a peak detectivity of 3.3 × 10¹¹ Jones under 260 nm illumination with an intensity of 50 μW/cm². Furthermore, by employing Al₂O₃ with a high dielectric constant as the gate dielectric, we developed a detector operable with a low drive voltage of 1.8 V. This provides a valuable research paradigm for future organic ultraviolet detection endeavors.