Two-dimensional van der Waals ferroelectrics: A pathway to next-generation devices in memory and neuromorphic computing

Abstract

The rapid increase in CPU processing speeds has significantly advanced artificial intelligence, yet it has also exacerbated the disparity in CPU utilization and data throughput rates due to the shared memory architecture of traditional von Neumann systems. To enhance computational efficiency, there is a critical need to explore advanced functional materials and integrate these into novel computing architectures. Two-dimensional (2D) ferroelectric materials, characterized by their atomic-scale ferroelectric non-volatile properties and low switching barriers, emerge as promising candidates. These materials are particularly suitable for use as non-volatile resistors and artificial synapses within in-memory computing frameworks. Furthermore, their compatibility with Si-CMOS technology enables the high-density integration of devices, potentially driving a new paradigm in integrated computation between processing units and storage architectures. This review focuses on recent developments in 2D ferroelectric materials, including their structural properties, polarization switching mechanisms, and diverse applications. Special emphasis is placed on their potential in integrated applications such as non-volatile memories, neural network computing, non-volatile logic operations, and optoelectronic memories within neuromorphic computing devices.