Interpretation of the degradation and trends in the performance of heterojunction silicon solar cells at low temperature

IF 6.3 2区 材料科学 Q2 ENERGY & FUELS Solar Energy Materials and Solar Cells Pub Date : 2024-11-04 DOI:10.1016/j.solmat.2024.113214
Moustafa Y. Ghannam , Jef Poortmans
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Abstract

A compact model that combines numerical simulations using AFORS-HET and accurate equivalent circuit modelling is proposed and used to interpret the origins of the degradation and anomality's in the performance of the a-Si:H/c-Si heterojunction solar cells and its parameters at low temperature. The interpretations are applied to several trends reported on real cells. It is shown that as T decreases the a-Si:H(i) layer is depleted gradually from holes and that the cell operation fails once the layer is totally depleted and becoming intrinsic. The failure is caused by a substantial and sharp increase in the cell series resistance causing the collapse of the fill factor and of the cell current. It is found that at low temperature the open circuit voltage is significantly affected and its temperature dependence strongly distorted by hole depletion in the a-Si:H(i) spacer especially when the TCO work function is not appropriate. It is aslo shown that the S-shape in the cell I-V characteristics under illumination is closely linked to the TCO barrier reverse saturation current which explains its higher probability of appearnce at low temperature. Finally, it is concluded that the HJT cell would perform optimally down to the low 200 K range when the a-Si:H(p) is heavily doped and the front contact is ideally ohmic. Failing to satisfy such conditions the temperature range in which the HJT cell is useful is very limited.
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解读异质结硅太阳能电池在低温条件下的性能退化和发展趋势
我们提出了一个结合 AFORS-HET 数值模拟和精确等效电路建模的紧凑模型,用于解释 a-Si:H/c-Si 异质结太阳能电池及其参数在低温下性能下降和异常的原因。这些解释适用于实际电池的几种趋势。结果表明,随着温度的降低,a-Si:H(i) 层中的空穴逐渐耗尽,一旦该层完全耗尽并成为本征层,电池就会失效。电池失效的原因是电池串联电阻大幅急剧增加,导致填充因子和电池电流崩溃。研究发现,在低温条件下,a-Si:H(i) 间隔层中的空穴耗竭会显著影响开路电压,并严重扭曲其温度依赖性,尤其是在 TCO 功函数不合适的情况下。此外,研究还表明,光照下电池 I-V 特性中的 S 形与 TCO 势垒反向饱和电流密切相关,这也是其在低温下出现概率较高的原因。最后,得出的结论是,当 a-Si:H(p) 被大量掺杂且前触点为理想欧姆时,HJT 电池在低至 200 K 的范围内性能最佳。如果不满足这些条件,HJT 电池的适用温度范围就非常有限。
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来源期刊
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells 工程技术-材料科学:综合
CiteScore
12.60
自引率
11.60%
发文量
513
审稿时长
47 days
期刊介绍: Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.
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