Surface photovoltage predicts open circuit voltage in GaP/PEDOT:PSS and GaP/CuSCN heterojunction solar cells†

Abstract

The cost-effective fabrication of inorganic photovoltaic (PV) devices is important for their implementation on a global scale. Solution processing techniques, such as spray coating, spin coating, and electrodeposition, can drive down costs; however, a better understanding of the charge transfer characteristics of the resulting semiconductor heterojunctions is needed to minimize photovoltage losses at interfaces. In this work, we generate solution-processed heterojunctions by spin coating PEDOT:PSS and electrodepositing CuSCN as hole transport layers (HTLs) onto GaP wafers. After adding silver paint as a front contact, we obtain devices with short circuit current densities of 0.40 mA cm⁻² and 0.18 mA cm⁻², open circuit voltages of 0.47 V and 0.43 V, and power conversion efficiencies of 0.045% and 0.031% for PEDOT:PSS and CuSCN HTLs, respectively. Surface photovoltage spectroscopy (SPS) is used to study photochemical charge separation at the illuminated GaP interfaces. We find that the surface photovoltage signal is a good predictor of the photovoltage of the devices, as confirmed by comparison with open circuit potential data. SPS also reveals improved hole collection by the HTLs and a detrimental Schottky junction at the In/GaP back contact, further evidenced by S-shaped current–voltage profiles in electric measurements. Reducing the Schottky barrier height will be essential to improve device performance.