Substantially Enhanced Spin Polarization in Epitaxial CrTe2 Quantum Films

IF 27.4 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Advanced Materials Pub Date : 2024-11-05 DOI:10.1002/adma.202411137
Xiaoqian Zhang, Qiangsheng Lu, Zhen-Xiong Shen, Wei Niu, Xiangrui Liu, Jiahua Lu, Wenting Lin, Lulu Han, Yakui Weng, Tianhao Shao, Pengfei Yan, Quan Ren, Huayao Li, Tay-Rong Chang, David J. Singh, Lixin He, Liang He, Chang Liu, Guang Bian, Lin Miao, Yongbing Xu
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Abstract

2D van der Waals (vdW) magnets, which extend to the monolayer (ML) limit, are rapidly gaining prominence in logic applications for low-power electronics. To improve the performance of spintronic devices, such as vdW magnetic tunnel junctions, a large effective spin polarization of valence electrons is highly desired. Despite its considerable significance, direct probe of spin polarization in these 2D magnets has not been extensively explored. Here, using 2D vdW ferromagnet of CrTe2 as a prototype, the spin degrees of freedom in the thin films are directly probed using Mott polarimetry. The electronic band of 50 ML CrTe2 thin film, spanning the Brillouin zone, exhibits pronounced spin-splitting with polarization peaking at 7.9% along the out-of-plane direction. Surprisingly, atomic-layer-dependent spin-resolved measurements show a significantly enhanced spin polarization in a 3 ML CrTe2 film, achieving 23.4% polarization even in the absence of an external magnetic field. The demonstrated correlation between spin polarization and film thickness highlights the pivotal influence of perpendicular magnetic anisotropy, interlayer interactions, and itinerant behavior on these properties, as corroborated by theoretical analysis. This groundbreaking experimental verification of intrinsic effective spin polarization in CrTe2 ultrathin films marks a significant advance in establishing 2D ferromagnetic atomic layers as a promising platform for innovative vdW-based spintronic devices.

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大幅增强外延 CrTe2 量子薄膜的自旋极化能力
扩展到单层(ML)极限的二维范德瓦尔斯(vdW)磁体在低功耗电子产品的逻辑应用中正迅速崭露头角。为了提高自旋电子器件(如 vdW 磁性隧道结)的性能,人们非常需要价电子具有较大的有效自旋极化。尽管自旋极化具有相当重要的意义,但在这些二维磁体中对自旋极化的直接探测尚未得到广泛探索。本文以 CrTe2 的二维 vdW 铁磁体为原型,利用莫特极坐标法直接探测了薄膜中的自旋自由度。50 ML CrTe2 薄膜的电子带横跨布里渊区,表现出明显的自旋分裂,沿平面外方向的极化峰值为 7.9%。令人惊讶的是,原子层依赖性自旋分辨测量显示,3 ML CrTe2 薄膜的自旋极化显著增强,即使在没有外部磁场的情况下也能达到 23.4% 的极化。自旋极化与薄膜厚度之间的相关性凸显了垂直磁各向异性、层间相互作用和巡回行为对这些特性的关键影响,理论分析也证实了这一点。这一开创性的实验验证了 CrTe2 超薄薄膜的内在有效自旋极化,标志着在将二维铁磁原子层作为基于 vdW 的创新自旋电子器件的前景广阔的平台方面取得了重大进展。
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来源期刊
Advanced Materials
Advanced Materials 工程技术-材料科学:综合
CiteScore
43.00
自引率
4.10%
发文量
2182
审稿时长
2 months
期刊介绍: Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.
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