A Digital SRAM-Based Computing-in-Memory Macro Supporting Parallel Maintaining for Network Management

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-10-10 DOI:10.1109/LSSC.2024.3477619
Geng Li;Hanqing Zheng;Jiacong Sun;Hailong Jiao
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引用次数: 0

Abstract

A digital SRAM-based computing-in-memory (CIM) macro is proposed to enable parallel maintaining for statistics counters in network management. A new 18-transistor bit-cell is designed to support in-situ counter maintaining. A joint coding scheme and a daisy-chain circuit are leveraged to enhance the throughput as well as reduce the computing energy consumption and area. The proposed CIM macro saves $6.9\times $ in energy at 1.2 V and $2.33\times $ in area compared with the conventional statistics counters in a 55-nm CMOS technology.
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基于数字 SRAM 的计算内存宏,支持并行维护网络管理
为实现网络管理中统计计数器的并行维护,提出了一种基于数字 SRAM 的内存计算(CIM)宏。设计了一种新的 18 晶体管位元组,以支持原位计数器维护。利用联合编码方案和菊花链电路提高了吞吐量,并减少了计算能耗和面积。与采用 55 纳米 CMOS 技术的传统统计计数器相比,所提出的 CIM 宏在 1.2 V 电压下可节省 6.9 美元的能耗和 2.33 美元的面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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