{"title":"A Digital SRAM-Based Computing-in-Memory Macro Supporting Parallel Maintaining for Network Management","authors":"Geng Li;Hanqing Zheng;Jiacong Sun;Hailong Jiao","doi":"10.1109/LSSC.2024.3477619","DOIUrl":null,"url":null,"abstract":"A digital SRAM-based computing-in-memory (CIM) macro is proposed to enable parallel maintaining for statistics counters in network management. A new 18-transistor bit-cell is designed to support in-situ counter maintaining. A joint coding scheme and a daisy-chain circuit are leveraged to enhance the throughput as well as reduce the computing energy consumption and area. The proposed CIM macro saves \n<inline-formula> <tex-math>$6.9\\times $ </tex-math></inline-formula>\n in energy at 1.2 V and \n<inline-formula> <tex-math>$2.33\\times $ </tex-math></inline-formula>\n in area compared with the conventional statistics counters in a 55-nm CMOS technology.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"327-330"},"PeriodicalIF":2.2000,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10713227/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
A digital SRAM-based computing-in-memory (CIM) macro is proposed to enable parallel maintaining for statistics counters in network management. A new 18-transistor bit-cell is designed to support in-situ counter maintaining. A joint coding scheme and a daisy-chain circuit are leveraged to enhance the throughput as well as reduce the computing energy consumption and area. The proposed CIM macro saves
$6.9\times $
in energy at 1.2 V and
$2.33\times $
in area compared with the conventional statistics counters in a 55-nm CMOS technology.