High-κ monocrystalline dielectrics for low-power two-dimensional electronics

IF 37.2 1区 材料科学 Q1 CHEMISTRY, PHYSICAL Nature Materials Pub Date : 2024-11-06 DOI:10.1038/s41563-024-02043-3
Lei Yin, Ruiqing Cheng, Xuhao Wan, Jiahui Ding, Jun Jia, Yao Wen, Xiaoze Liu, Yuzheng Guo, Jun He
{"title":"High-κ monocrystalline dielectrics for low-power two-dimensional electronics","authors":"Lei Yin, Ruiqing Cheng, Xuhao Wan, Jiahui Ding, Jun Jia, Yao Wen, Xiaoze Liu, Yuzheng Guo, Jun He","doi":"10.1038/s41563-024-02043-3","DOIUrl":null,"url":null,"abstract":"<p>The downscaling of complementary metal-oxide-semiconductor technology has produced breakthroughs in electronics, but more extreme scaling has hit a wall of device performance degradation. One key challenge is the development of insulators with high dielectric constant, wide bandgap and high tunnel masses. Here, we show that two-dimensional monocrystalline gadolinium pentoxide, which is devised through combining particle swarm optimization algorithm and theoretical calculations and synthesized via van der Waals epitaxy, could exhibit a high dielectric constant of ~25.5 and a wide bandgap simultaneously. A desirable equivalent oxide thickness down to 1 nm with an ultralow leakage current of ~10<sup>−4</sup> A cm<sup>−2</sup> even at 5 MV cm<sup>−1</sup> is achieved. The molybdenum disulfide transistors gated by gadolinium pentoxide exhibit high on/off ratios over 10<sup>8</sup> and near-Boltzmann-limit subthreshold swing at an operation voltage of 0.5 V. We also constructed inverter circuits with high gain and nanowatt power consumption. This reliable approach to integrating ultrathin monocrystalline insulators paves the way to future nanoelectronics.</p>","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"144 1","pages":""},"PeriodicalIF":37.2000,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1038/s41563-024-02043-3","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

The downscaling of complementary metal-oxide-semiconductor technology has produced breakthroughs in electronics, but more extreme scaling has hit a wall of device performance degradation. One key challenge is the development of insulators with high dielectric constant, wide bandgap and high tunnel masses. Here, we show that two-dimensional monocrystalline gadolinium pentoxide, which is devised through combining particle swarm optimization algorithm and theoretical calculations and synthesized via van der Waals epitaxy, could exhibit a high dielectric constant of ~25.5 and a wide bandgap simultaneously. A desirable equivalent oxide thickness down to 1 nm with an ultralow leakage current of ~10−4 A cm−2 even at 5 MV cm−1 is achieved. The molybdenum disulfide transistors gated by gadolinium pentoxide exhibit high on/off ratios over 108 and near-Boltzmann-limit subthreshold swing at an operation voltage of 0.5 V. We also constructed inverter circuits with high gain and nanowatt power consumption. This reliable approach to integrating ultrathin monocrystalline insulators paves the way to future nanoelectronics.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于低功率二维电子器件的高κ单晶电介质
互补金属氧化物半导体技术的规模缩小在电子领域取得了突破性进展,但更极端的规模缩小却遇到了器件性能下降的障碍。其中一个关键挑战是开发具有高介电常数、宽带隙和高隧道质量的绝缘体。在这里,我们展示了通过粒子群优化算法和理论计算相结合设计并通过范德华外延合成的二维单晶五氧化二钆,它可以同时表现出 ~25.5 的高介电常数和宽带隙。即使在 5 MV cm-1 的条件下,也能实现低至 1 nm 的理想等效氧化物厚度和 ~10-4 A cm-2 的超低漏电流。由五氧化二钆栅极的二硫化钼晶体管显示出超过 108 的高导通/截止比,并且在 0.5 V 工作电压下具有接近波尔兹曼极限的次阈值摆幅。我们还构建了具有高增益和纳瓦功耗的逆变器电路。这种集成超薄单晶绝缘体的可靠方法为未来的纳米电子学铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Nature Materials
Nature Materials 工程技术-材料科学:综合
CiteScore
62.20
自引率
0.70%
发文量
221
审稿时长
3.2 months
期刊介绍: Nature Materials is a monthly multi-disciplinary journal aimed at bringing together cutting-edge research across the entire spectrum of materials science and engineering. It covers all applied and fundamental aspects of the synthesis/processing, structure/composition, properties, and performance of materials. The journal recognizes that materials research has an increasing impact on classical disciplines such as physics, chemistry, and biology. Additionally, Nature Materials provides a forum for the development of a common identity among materials scientists and encourages interdisciplinary collaboration. It takes an integrated and balanced approach to all areas of materials research, fostering the exchange of ideas between scientists involved in different disciplines. Nature Materials is an invaluable resource for scientists in academia and industry who are active in discovering and developing materials and materials-related concepts. It offers engaging and informative papers of exceptional significance and quality, with the aim of influencing the development of society in the future.
期刊最新文献
Bending electrons get hot Spontaneous Hall effect induced by collinear antiferromagnetic order at room temperature Expanding the library of high-quality thin films Cooler breakthrough using the Thomson effect Planetary boundaries and scientific societies
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1