Pub Date : 2026-02-11DOI: 10.1038/s41563-025-02478-2
Tom P. A. van der Pol, Dongxun Lyu, Zoé Truyens, Vincent Lemaur, Demetra Tsokkou, Arianna Magni, Chiara Musumeci, Han-Yan Wu, Junpeng Ji, David Cornil, Chi-Yuan Yang, Scott T. Keene, Gabriele D’Avino, Alberto Salleo, Natalie Banerji, Clare Grey, David Beljonne, Simone Fabiano
Controlling ion–polymer interactions in organic mixed ionic-electronic conductors is crucial for optimizing device performance in applications ranging from bioelectronics and energy storage to photonics. Achieving this requires a molecular-level understanding of how ion uptake, solvation and polymer structure evolve during electrochemical doping. Here using a multimodal operando approach, we uncover an unexpected response in the prototypical n-type ladder polymer poly(benzimidazobenzophenanthroline) (BBL) on doping with protic cations such as ammonium. At high doping levels, strong ion–polymer interactions (primarily hydrogen bonding) between cations and the BBL backbone promote charge localization and disrupt ion hydration, leading to a pronounced reduction in mass and thickness. Operando 2H NMR identifies water expulsion, rather than ion removal, as the origin of this deswelling. Our combined experimental and modelling results reveal a previously unobserved regime of ion–polymer coupling in organic mixed ionic-electronic conductors, establishing a framework for material design and applications that span (bio-)electronics to photonics.
{"title":"Cation–polymer interactions drive water expulsion and deswelling in n-type ladder organic mixed conductors","authors":"Tom P. A. van der Pol, Dongxun Lyu, Zoé Truyens, Vincent Lemaur, Demetra Tsokkou, Arianna Magni, Chiara Musumeci, Han-Yan Wu, Junpeng Ji, David Cornil, Chi-Yuan Yang, Scott T. Keene, Gabriele D’Avino, Alberto Salleo, Natalie Banerji, Clare Grey, David Beljonne, Simone Fabiano","doi":"10.1038/s41563-025-02478-2","DOIUrl":"https://doi.org/10.1038/s41563-025-02478-2","url":null,"abstract":"Controlling ion–polymer interactions in organic mixed ionic-electronic conductors is crucial for optimizing device performance in applications ranging from bioelectronics and energy storage to photonics. Achieving this requires a molecular-level understanding of how ion uptake, solvation and polymer structure evolve during electrochemical doping. Here using a multimodal operando approach, we uncover an unexpected response in the prototypical n-type ladder polymer poly(benzimidazobenzophenanthroline) (BBL) on doping with protic cations such as ammonium. At high doping levels, strong ion–polymer interactions (primarily hydrogen bonding) between cations and the BBL backbone promote charge localization and disrupt ion hydration, leading to a pronounced reduction in mass and thickness. Operando 2H NMR identifies water expulsion, rather than ion removal, as the origin of this deswelling. Our combined experimental and modelling results reveal a previously unobserved regime of ion–polymer coupling in organic mixed ionic-electronic conductors, establishing a framework for material design and applications that span (bio-)electronics to photonics.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"31 1","pages":""},"PeriodicalIF":41.2,"publicationDate":"2026-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146152242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-09DOI: 10.1038/s41563-026-02495-9
Ce Bian, Yifan Zhao, Roger Guzman, Hongtao Liu, Hao Hu, Qi Qi, Ke Zhu, Hao Wang, Kang Wu, Hui Guo, Wanzhen He, Zhaoqing Wang, Peng Peng, Zhiping Xu, Wu Zhou, Feng Ding, Haitao Yang, Hong-Jun Gao
Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs) and hexagonal boron nitride, exhibit intriguing properties that are sensitive to their atomic-scale structures and can be further enriched through van der Waals (vdW) integration. However, the precise synthesis and clean integration of 2D materials remain challenging. Here, using graphene or hexagonal boron nitride as a vdW capping layer, we create a nano-confined environment that directs the growth kinetics of 2D TMDs (such as NbSe2 and MoS2), enabling precise formation of TMD monolayers with tailored morphologies, from isolated monolayer domains to large-scale continuous films and intrinsically patterned rings. Moreover, Janus S-Mo-Se monolayers are synthesized with atomic precision via vdW-protected bottom-plane chalcogen substitution. Importantly, our approach simultaneously produces ultraclean vdW interfaces. This in situ encapsulation reliably preserves air-sensitive materials, as evidenced by the enhanced superconductivity of nano-confined NbSe2 monolayers. Altogether, our study establishes a versatile platform for the controlled synthesis and integration of 2D TMDs for advanced applications.
{"title":"Atomically precise synthesis and simultaneous heterostructure integration of 2D transition metal dichalcogenides through nano-confinement.","authors":"Ce Bian, Yifan Zhao, Roger Guzman, Hongtao Liu, Hao Hu, Qi Qi, Ke Zhu, Hao Wang, Kang Wu, Hui Guo, Wanzhen He, Zhaoqing Wang, Peng Peng, Zhiping Xu, Wu Zhou, Feng Ding, Haitao Yang, Hong-Jun Gao","doi":"10.1038/s41563-026-02495-9","DOIUrl":"https://doi.org/10.1038/s41563-026-02495-9","url":null,"abstract":"<p><p>Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs) and hexagonal boron nitride, exhibit intriguing properties that are sensitive to their atomic-scale structures and can be further enriched through van der Waals (vdW) integration. However, the precise synthesis and clean integration of 2D materials remain challenging. Here, using graphene or hexagonal boron nitride as a vdW capping layer, we create a nano-confined environment that directs the growth kinetics of 2D TMDs (such as NbSe<sub>2</sub> and MoS<sub>2</sub>), enabling precise formation of TMD monolayers with tailored morphologies, from isolated monolayer domains to large-scale continuous films and intrinsically patterned rings. Moreover, Janus S-Mo-Se monolayers are synthesized with atomic precision via vdW-protected bottom-plane chalcogen substitution. Importantly, our approach simultaneously produces ultraclean vdW interfaces. This in situ encapsulation reliably preserves air-sensitive materials, as evidenced by the enhanced superconductivity of nano-confined NbSe<sub>2</sub> monolayers. Altogether, our study establishes a versatile platform for the controlled synthesis and integration of 2D TMDs for advanced applications.</p>","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":" ","pages":""},"PeriodicalIF":38.5,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146149910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-09DOI: 10.1038/s41563-026-02503-y
Chang-Hsun Huang, Jui-Han Fu, Vincent Tung
{"title":"Ultraclean monolayers from a van der Waals confinement.","authors":"Chang-Hsun Huang, Jui-Han Fu, Vincent Tung","doi":"10.1038/s41563-026-02503-y","DOIUrl":"https://doi.org/10.1038/s41563-026-02503-y","url":null,"abstract":"","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":" ","pages":""},"PeriodicalIF":38.5,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146149914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-05DOI: 10.1038/s41563-026-02525-6
Mingyi Zhang, Benjamin A Legg, Benjamin A Helfrecht, Yuanzhong Zhang, Shuai Tan, Ying Xia, Rae Karell Yodong, Monica Iepure, Venkateshkumar Prabhakaran, Peter J Pauzauskie, Younjin Min, Christopher J Mundy, James J De Yoreo
{"title":"Author Correction: How charge frustration causes ion ordering and microphase separation at surfaces.","authors":"Mingyi Zhang, Benjamin A Legg, Benjamin A Helfrecht, Yuanzhong Zhang, Shuai Tan, Ying Xia, Rae Karell Yodong, Monica Iepure, Venkateshkumar Prabhakaran, Peter J Pauzauskie, Younjin Min, Christopher J Mundy, James J De Yoreo","doi":"10.1038/s41563-026-02525-6","DOIUrl":"10.1038/s41563-026-02525-6","url":null,"abstract":"","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":" ","pages":""},"PeriodicalIF":38.5,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146125880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-03DOI: 10.1038/s41563-026-02504-x
As artificial intelligence tools continue to develop, their impact is growing.
随着人工智能工具的不断发展，它们的影响越来越大。
{"title":"The dynamic frontier of artificial intelligence","authors":"","doi":"10.1038/s41563-026-02504-x","DOIUrl":"10.1038/s41563-026-02504-x","url":null,"abstract":"As artificial intelligence tools continue to develop, their impact is growing.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"25 2","pages":"161-161"},"PeriodicalIF":38.5,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41563-026-02504-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146103028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-30DOI: 10.1038/s41563-026-02479-9
Rong Lv,Jia Li,Yunzhu Shi,Shuai Dai,Shuo Wang,Xinren Chen,Xiaoye Zhou,Fei Zhang,Meiyuan Jiao,Chao Ma,Alexander Schökel,Shaolou Wei,Yan Ma,Claudio Pistidda,Zhifeng Lei,Zhaoping Lu
Ultrahigh-strength bulk alloys with martensitic structures are essential for heavy-duty applications and infrastructure. However, they often contain small-angle grain boundaries (SAGBs), which enhance ductility but weaken resistance to dislocation motion. This limitation restricts tensile strength to below 2.5 GPa, even when nanoprecipitates or hierarchical architectures are introduced. Here we overcome this limitation by developing a near-single-phase martensitic alloy with a tensile strength exceeding 3 GPa. In the model (Fe49Co40Mo11)99.6B0.3C0.1 (at.%) alloy, cold rolling followed by low-temperature annealing introduces a high density of dislocations and drives Mo, C and B atoms to cosegregate at the SAGBs, forming interface complexes. These complexes stabilize the SAGBs, reinforce barriers to dislocation motion and still permit dislocation transmission across boundaries. As a result, the alloy achieves a tensile yield strength of 3.05 GPa and a fracture elongation of 5.13%, setting a benchmark for ultrahigh-strength, ductile alloys. This simple, scalable process integrates seamlessly with existing manufacturing methods and opens a path to next-generation structural materials.
{"title":"A 3-GPa ductile martensitic alloy enabled by interface complexes and dislocations.","authors":"Rong Lv,Jia Li,Yunzhu Shi,Shuai Dai,Shuo Wang,Xinren Chen,Xiaoye Zhou,Fei Zhang,Meiyuan Jiao,Chao Ma,Alexander Schökel,Shaolou Wei,Yan Ma,Claudio Pistidda,Zhifeng Lei,Zhaoping Lu","doi":"10.1038/s41563-026-02479-9","DOIUrl":"https://doi.org/10.1038/s41563-026-02479-9","url":null,"abstract":"Ultrahigh-strength bulk alloys with martensitic structures are essential for heavy-duty applications and infrastructure. However, they often contain small-angle grain boundaries (SAGBs), which enhance ductility but weaken resistance to dislocation motion. This limitation restricts tensile strength to below 2.5 GPa, even when nanoprecipitates or hierarchical architectures are introduced. Here we overcome this limitation by developing a near-single-phase martensitic alloy with a tensile strength exceeding 3 GPa. In the model (Fe49Co40Mo11)99.6B0.3C0.1 (at.%) alloy, cold rolling followed by low-temperature annealing introduces a high density of dislocations and drives Mo, C and B atoms to cosegregate at the SAGBs, forming interface complexes. These complexes stabilize the SAGBs, reinforce barriers to dislocation motion and still permit dislocation transmission across boundaries. As a result, the alloy achieves a tensile yield strength of 3.05 GPa and a fracture elongation of 5.13%, setting a benchmark for ultrahigh-strength, ductile alloys. This simple, scalable process integrates seamlessly with existing manufacturing methods and opens a path to next-generation structural materials.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"62 1 1","pages":""},"PeriodicalIF":41.2,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146089192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-30DOI: 10.1038/s41563-026-02487-9
Sebastian Walfort,Xuan Thang Vu,Jakob Ballmaier,Nils Holle,Niklas Vollmar,Martin Salinga
Resistance noise in memristive devices is often attributed to simple thermally activated processes, such as fluctuations across single energy barriers. However, this picture may underestimate the complexity of the underlying atomic dynamics, which can be described as transitions between many local minima in a high-dimensional free energy landscape shaped by energetic and entropic contributions, yet such landscapes are difficult to access experimentally. Using a hidden Markov model, we analyse resistance fluctuations in a nanoscopic volume of the phase-change material germanium telluride. We quantify the transition rates between discrete resistance states over a wide temperature range. The rates follow an Arrhenius-like behaviour, but the extracted attempt frequencies span several orders of magnitude and include values far below typical phonon frequencies. This spread reflects substantial entropic contributions to the free energy barriers, which we quantify by tracking individual transitions across temperatures. This approach should be broadly applicable to memristive materials, where significant resistance changes are linked to atomic-scale transitions.
{"title":"A free energy landscape analysis of resistance fluctuations in a memristive device.","authors":"Sebastian Walfort,Xuan Thang Vu,Jakob Ballmaier,Nils Holle,Niklas Vollmar,Martin Salinga","doi":"10.1038/s41563-026-02487-9","DOIUrl":"https://doi.org/10.1038/s41563-026-02487-9","url":null,"abstract":"Resistance noise in memristive devices is often attributed to simple thermally activated processes, such as fluctuations across single energy barriers. However, this picture may underestimate the complexity of the underlying atomic dynamics, which can be described as transitions between many local minima in a high-dimensional free energy landscape shaped by energetic and entropic contributions, yet such landscapes are difficult to access experimentally. Using a hidden Markov model, we analyse resistance fluctuations in a nanoscopic volume of the phase-change material germanium telluride. We quantify the transition rates between discrete resistance states over a wide temperature range. The rates follow an Arrhenius-like behaviour, but the extracted attempt frequencies span several orders of magnitude and include values far below typical phonon frequencies. This spread reflects substantial entropic contributions to the free energy barriers, which we quantify by tracking individual transitions across temperatures. This approach should be broadly applicable to memristive materials, where significant resistance changes are linked to atomic-scale transitions.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"40 1","pages":""},"PeriodicalIF":41.2,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146089054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Freestanding functional membranes open a promising avenue to the fabrication of flexible electronic devices. To date, research has mainly focused on perovskite-like oxides with pseudocubic structures. Investigation of freestanding hexagonal oxide materials is severely restricted due to the lack of a proper sacrificial layer. Here we present our discovery of water-soluble crystalline hexagonal BaAl2O4, which can serve as an excellent sacrificial layer for obtaining membranes with six-fold or three-fold symmetry. Remarkably, BaAl2O4 can rapidly dissolve in water (<1 min), but is stable in air, O2 and NH3, even at very high temperatures, thus allowing in situ or ex situ growth of high-quality materials for integrated devices. To demonstrate the generic nature of this sacrificial layer, we tested a large collection of oxide and nitride films, including YMnO3 (0001), LiCoO2 (0001), α-Fe2O3 (0001), In2O3 (111), NiO (111), β-Ga2O3 ( 2 ¯ 01 ) and TiN (111). Furthermore, integrated devices based on such crystalline membranes demonstrate a substantially improved performance.
{"title":"Water-soluble hexagonal BaAl2O4 as sacrificial layer for freestanding crystalline membranes and flexible devices.","authors":"Mengcheng Li,Chao Lu,Yuqian Wang,Haoyang Cheng,Jinling Zhou,Jiachang Bi,Lei Gao,Qinghua Zhang,Nan Liu,Pengyu Liu,Lu Wang,Caiyong Li,Jiayi Song,Xiangyu Lyu,Mingtong Zhu,Jin Liu,Faran Zhou,Ailing Ji,Jimin Zhao,Peng Jiang,Na Li,Liang Si,Yanwei Cao,Peigang Li,Lin Gu,Pu Yu,Guangyu Zhang,Zexian Cao,Nianpeng Lu","doi":"10.1038/s41563-026-02486-w","DOIUrl":"https://doi.org/10.1038/s41563-026-02486-w","url":null,"abstract":"Freestanding functional membranes open a promising avenue to the fabrication of flexible electronic devices. To date, research has mainly focused on perovskite-like oxides with pseudocubic structures. Investigation of freestanding hexagonal oxide materials is severely restricted due to the lack of a proper sacrificial layer. Here we present our discovery of water-soluble crystalline hexagonal BaAl2O4, which can serve as an excellent sacrificial layer for obtaining membranes with six-fold or three-fold symmetry. Remarkably, BaAl2O4 can rapidly dissolve in water (<1 min), but is stable in air, O2 and NH3, even at very high temperatures, thus allowing in situ or ex situ growth of high-quality materials for integrated devices. To demonstrate the generic nature of this sacrificial layer, we tested a large collection of oxide and nitride films, including YMnO3 (0001), LiCoO2 (0001), α-Fe2O3 (0001), In2O3 (111), NiO (111), β-Ga2O3 ( 2 ¯ 01 ) and TiN (111). Furthermore, integrated devices based on such crystalline membranes demonstrate a substantially improved performance.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"30 1","pages":""},"PeriodicalIF":41.2,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146073251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-29DOI: 10.1038/s41563-025-02476-4
Luka Matej Devenica,Zach Hadjri,Jan Kumlin,Daniel Suárez-Forero,Runtong Li,Klevis Domi,Bosai Lyu,Weijie Li,Ludivine Fausten,Valeria Vento,Nicolas Ubrig,Song Liu,James Hone,Kenji Watanabe,Takashi Taniguchi,Thomas Pohl,Ajit Srivastava
Spontaneous symmetry breaking, driven by competing interactions and quantum fluctuations, is fundamental to understanding ordered electronic phases. Although electrically neutral, optical excitations like excitons can interact through their dipole moment, raising the possibility of optically active ordered phases. The effects of spontaneous ordering on optical properties remains underexplored. The excitonic Mott insulating state recently observed in semiconducting moiré crystals may help clarify this question. Here we present evidence for an in-plane ferroelectric phase of dipolar moiré excitons driven by strong exciton-exciton interactions. We reveal a speed-up of photon emission at late times and low densities in excitonic decay. This counterintuitive behaviour is attributed to collective radiance, linked to the transition between disordered and symmetry-broken ferroelectric phases of moiré excitons. Our findings provide evidence for strong dipolar intersite interactions in moiré lattices, demonstrate collective photon emission as a probe for moiré quantum materials and a path for exploring cooperative optical phenomena in strongly correlated systems.
{"title":"Collective photon emission and ferroelectric exciton ordering near Mott insulating state in WSe2/WS2 heterobilayers.","authors":"Luka Matej Devenica,Zach Hadjri,Jan Kumlin,Daniel Suárez-Forero,Runtong Li,Klevis Domi,Bosai Lyu,Weijie Li,Ludivine Fausten,Valeria Vento,Nicolas Ubrig,Song Liu,James Hone,Kenji Watanabe,Takashi Taniguchi,Thomas Pohl,Ajit Srivastava","doi":"10.1038/s41563-025-02476-4","DOIUrl":"https://doi.org/10.1038/s41563-025-02476-4","url":null,"abstract":"Spontaneous symmetry breaking, driven by competing interactions and quantum fluctuations, is fundamental to understanding ordered electronic phases. Although electrically neutral, optical excitations like excitons can interact through their dipole moment, raising the possibility of optically active ordered phases. The effects of spontaneous ordering on optical properties remains underexplored. The excitonic Mott insulating state recently observed in semiconducting moiré crystals may help clarify this question. Here we present evidence for an in-plane ferroelectric phase of dipolar moiré excitons driven by strong exciton-exciton interactions. We reveal a speed-up of photon emission at late times and low densities in excitonic decay. This counterintuitive behaviour is attributed to collective radiance, linked to the transition between disordered and symmetry-broken ferroelectric phases of moiré excitons. Our findings provide evidence for strong dipolar intersite interactions in moiré lattices, demonstrate collective photon emission as a probe for moiré quantum materials and a path for exploring cooperative optical phenomena in strongly correlated systems.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"72 1","pages":""},"PeriodicalIF":41.2,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146073252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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